journal article·2009-07

Surface termination of the NdGaO3(110)

R. Dirsyte, J. Schwarzkopf, G. Wagner, J. Lienemann, M. Busch, H. Winter, R. Fornari

Applied Surface Science· Volume 255· Issue 20
Publisher page

Abstract

Abstract Auger electron spectroscopy using excitation via grazing impact of protons was applied to determine the elemental composition of the topmost and near-surface layers of a NdGaO3(1 1 0) substrate. The preparation conditions of vicinal NdGaO3 substrates were optimized by varying the annealing temperature, time, and gas atmosphere. Well prepared surfaces show regularly arranged, atomically smooth terraces with single-atomic steps. The surfaces were always NdO terminated with a small amount of Ga (2–4%) atoms on the surface. A Ga and O depletion layer with a thickness of about 4 nm has been detected at optimized preparation conditions.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Luminescence Properties of Advanced Materials

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