The impact of partial H intercalation on the quasi-free-standing properties of graphene on SiC(0001)
Source abstract
Abstract
Abstract Graphene has attracted huge attention due to its unique electronic properties, however, when supported those are significantly dependent on the interface interactions. One of the methods of decoupling graphene sheets from a substrate is hydrogen intercalation, which has been shown to produce quasi-free-standing (QFS) layers on a SiC(0001) surface. Still, the effects of incomplete H termination of SiC remain mostly unknown. This work investigates, employing density functional theory calculations, the impact of partial termination on the structural, and electronic properties of graphene. It is predicted that interfaces with partially damaged H layer or produced under a lower technological standard could still benefit from the intrinsic, however, quantitatively reduced, properties of QFS graphene.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · High voltage insulation and dielectric phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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