journal article·2013-02

Study on the electron structure and optical properties of Ga0.5Al0.5As(1 0 0) β2(2 × 4) reconstruction surface

Xiaohua Yu, Yujie Du, Bengkang Chang, Zhonghao Ge, Honggang Wang, Meishan Wang

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Abstract

Abstract Using quantum mechanics GASTEP software package based on the first principle density function theory (DFT), the electronic structure and optical properties of Ga0.5Al0.5As(1 0 0) β2(2 × 4) reconstruction surface are calculated. Result shows that Ga0.5Al0.5As(1 0 0) β2(2 × 4) reconstruction surface is stable. The calculated work function of Ga0.5Al0.5As(1 0 0) β2(2 × 4) reconstruction surface is 4.811 eV. The band gap of the surface is smaller than the bulk. During the formation of the surface, the electrons move into the bulk and a band-binding region is formed. The absorption peaks move to the high-energy edge and the reflectivity decreases, the static dielectric constant decreases, metal reflective properties region of the surface moves to the low-energy edge and is smaller than the bulk.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Photocathodes and Microchannel Plates · Ga2O3 and related materials · GaN-based semiconductor devices and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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