Electronic structure and optical band gap of silver photo-diffused Ge2Sb2Te5 thin film
Source abstract
Abstract
Abstract Thin films of amorphous chalcogenide with composition of Ge 22 Sb 22 Te 56 (thickness d = 250 nm) and silver film (thickness d = 50 nm) on top of chalcogenide film were deposited by thermal evaporation technique. Photo-diffusion of Ag into the amorphous Ge 2 Sb 2 Te 5 thin films has been carried out by illuminating the prepared Ge-Sb-Te:Ag bilayer with halogen lamp. The photo-diffused silver depth profile was traced by means of Time of Flight Secondary Ion Mass Spectroscopy. The films remain amorphous after Ag photo-diffusion into the amorphous Ge 2 Sb 2 Te 5 films. The composition of Ge 2 Sb 2 Te 5 thin films and the amount of Ag photo-diffused has been gathered from Electron Probe Micro-analyzer having a Wavelength Dispersive Spectrometer. The composition of the films was found to be very close to the bulk used to deposit films and the amount of Ag photo-diffused was ∼5.20 at.%. Changes in the electronic structures of Ge 2 Sb 2 Te 5 film on Ag photo-diffusion were studied using X-ray photoelectron spectroscopy. The incorporation of silver also increases the optical band gap of the film due to the decrease in the density of defect states on Ag photo-diffusion.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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