journal article·2023-01

First-principles investigate on the electronic structure and magnetic properties of 3d transition metal doped honeycomb InS monolayer

Ruifang Xue, Rong Han, Xiang Lin, Ping Wu

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OpenAlex topics: 2D Materials and Applications · ZnO doping and properties · MXene and MAX Phase Materials

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References (69)

Show source-provided references
1. The electronic properties of graphene10.1103/RevModPhys.81.109 ↗
2. Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage10.1126/science.1246501 ↗
3. Fabrication of a g-C3N4/MoS2 photocatalyst for enhanced RhB degradation10.1016/j.physe.2022.115361 ↗
4. A first principles investigation on the structural, mechanical, electronic, and catalytic properties of biphenylene10.1038/s41598-021-98261-9 ↗
5. Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides10.1103/PhysRevLett.108.196802 ↗
6. Two-dimensional flexible nanoelectronics10.1038/ncomms6678 ↗
7. Type-II Ising pairing in few-layer stanene10.1126/science.aax3873 ↗
8. Type-II Ising Superconductivity in Two-Dimensional Materials with Spin-Orbit Coupling10.1103/PhysRevLett.123.126402 ↗
9. Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study10.1103/PhysRevLett.119.106101 ↗
10. Two-dimensional antimonene single crystals grown by van der Waals epitaxy10.1038/ncomms13352 ↗
11. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs10.1126/science.aad1080 ↗
12. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon10.1103/PhysRevLett.108.155501 ↗
13. Electric Field-Modulated Charge Transfer in Geometrically Tailored MoX2/WX2 (X = S, Se) Heterostructures10.1021/acs.jpcc.1c07218 ↗
14. Valleytronics in 2D materials10.1038/natrevmats.2016.55 ↗
15. Strain effect on circularly polarized electroluminescence in transition metal dichalcogenides10.1103/PhysRevResearch.2.033340 ↗
16. Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene10.1103/PhysRevB.93.125428 ↗
17. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals10.1038/nature13184 ↗
18. Comprehensive understanding of intrinsic mobility in the monolayers of III-VI group 2D materials10.1039/C9CP04407H ↗
19. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics10.1039/C5CE01986A ↗
20. Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications10.1002/admt.201900108 ↗
21. Optical and photodetector properties of stripe-like InS crystal10.1039/C6RA22743K ↗
22. Annealing and deposition time effects on the structural, optical, and electrical properties of indium sulfide thin films produced by chemical bath deposition method10.3906/fiz-1704-6 ↗
23. Optical and electrical properties of indium monosulfide (InS) thin films10.1016/S0042-207X(01)00363-3 ↗
24. First-principles design of spintronics materials10.1093/nsr/nww026 ↗
25. Spintronics: A Spin-Based Electronics Vision for the Future10.1126/science.1065389 ↗
26. Tuning the Electronic and Magnetic Properties of Phosphorene by Vacancies and Adatoms10.1021/jp5110938 ↗
27. Vacancy-Induced Ferromagnetism of MoS2 Nanosheets10.1021/ja5120908 ↗
28. First-principles study of defects and adatoms in silicon carbide honeycomb structures10.1103/PhysRevB.81.075433 ↗
29. Optoelectronic and magnetic properties of transition metals adsorbed Pd2Se3 monolayer10.1016/j.micrna.2022.207260 ↗
30. Functionalization of BN honeycomb structure by adsorption and substitution of foreign atoms10.1103/PhysRevB.82.165402 ↗
31. Making nonmagnetic semiconductors ferromagnetic10.1126/science.281.5379.951 ↗
32. Magnetic oxide semiconductors10.1088/0268-1242/20/4/012 ↗
33. Ferromagnetic nitride-based semiconductors doped with transition metals and rare earths10.1088/0268-1242/22/9/R01 ↗
34. ZnO, ZnMnO and ZnCoO films grown by atomic layer deposition10.1088/0268-1242/27/7/074009 ↗
35. Wide band gap ferromagnetic semiconductors and oxides10.1063/1.1517164 ↗
36. Ferromagnetic InMnAs on InAs Prepared by Ion Implantation and Pulsed Laser Annealing10.1143/APEX.5.093007 ↗
37. Nonmagnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting10.1063/1.2940361 ↗
38. Boron nitride substrates for high-quality graphene electronics10.1038/nnano.2010.172 ↗
39. Switching Behavior of a Heterostructure Based on Periodically Doped Graphene Nanoribbon10.1103/PhysRevApplied.16.024030 ↗
40. Surface Adsorption and Vacancy in Tuning the Properties of Tellurene10.1021/acsami.9b21625 ↗
41. Strain-improved electronic and magnetic properties of V-, Cr-, Mn- and Fe-doped α- and β-tellurene10.1016/j.apsusc.2020.148454 ↗
42. Tuning electronic properties of silicane layers by tensile strain and external electric field: A first-principles study10.1016/j.tsf.2018.03.061 ↗
43. Bandgap modulation of partially chlorinated graphene (C4Cl) nanosheets via biaxial strain and external electric field: a computational study10.1007/s00339-018-1906-9 ↗
44. Magnetism in the strained ordered phases of PtxFe1-x, and PtxCo1-x (x=0.25, 0.5, and 0.75)10.1016/j.jpcs.2017.11.021 ↗
45. Non-linear modelling of the effects of strain on transition metal surfaces10.1016/j.cplett.2016.10.080 ↗
46. Strain Engineering of the CeNi5 System10.3390/magnetochemistry2040039 ↗
47. Effects of strain and surface modification on stability, electronic and optical properties of GaN monolayer10.1016/j.apsusc.2019.02.171 ↗
48. Adjustable electro-optical properties of novel graphene-like SiC2 via strain engineering10.1016/j.apsusc.2021.149956 ↗
49. Structural anisotropy results in strain-tunable electronic and optical properties in monolayer GeX and SnX (X = S, Se, Te)10.1063/1.4943969 ↗
50. Half-metal to magnetic semiconductor transition in Mn-doped monolayer Bi2O2Se tuned by strain10.1016/j.jmmm.2019.02.059 ↗
51. Transition metal doped puckered arsenene: Magnetic properties and potential as a catalyst10.1016/j.physe.2018.12.027 ↗
52. Magnetic Behaviors of 3d Transition Metal-Doped Silicane: a First-Principle Study10.1007/s10948-017-4532-4 ↗
53. Transition metal doped arsenene: A first-principles study10.1016/j.apsusc.2016.07.091 ↗
54. Neutron diffraction study on the structural phase transition in GeTe10.1088/0022-3719/20/10/012 ↗
55. Optical and electron-energy-loss spectroscopy of GeS, GeSe, SnS, and SnSe single crystals10.1103/PhysRevB.16.1616 ↗
56. Band theory and Mott insulators: Hubbard U instead of Stoner I10.1103/PhysRevB.44.943 ↗
57. Half-metallic properties of 3d transition metal atom-intercalated graphene@MS2 (M = W, Mo) hybrid structures10.1039/C7NR03581K ↗
58. Magnetism of Phthalocyanine-Based Organometallic Single Porous Sheet10.1021/ja204990j ↗
59. Synthesis and Photoresponse of Large GaSe Atomic Layers10.1021/nl4010089 ↗
60. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors10.1021/nn300889c ↗
61. Structural and electronic properties of monolayer group III monochalcogenides10.1103/PhysRevB.95.115409 ↗
62. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems10.1103/PhysRevB.87.100401 ↗
63. Magnetism without magnetic impurities in ZrO2 oxide10.1063/1.2936858 ↗
64. Exchange interactions in III-V and group-IV diluted magnetic semiconductors10.1103/PhysRevB.69.115208 ↗
65. Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy10.1021/acs.jpcc.2c02087 ↗
66. Prediction of High Curie Temperature, Large Magnetic Crystal Anisotropy, and Carrier Doping-Induced Half-Metallicity in Two-Dimensional Ferromagnetic FeX3 (X = F, Cl, Br, and I) Monolayers10.1021/acs.jpcc.1c03915 ↗
67. Strain-Controllable High Curie Temperature and Magnetic Crystal Anisotropy in a 2D Ferromagnetic Semiconductive FeI3 Monolayer10.1021/acsaelm.1c00363 ↗
68. First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phonon Coupling in Graphene10.1103/PhysRevLett.111.196802 ↗
69. Coexistence of Co doping and strain on arsenene and antimonene: tunable magnetism and half-metallic behavior10.1039/C7RA11163K ↗