Interface mechanics of heterogenous integration and its applications
Source abstract
Abstract
As the semiconductor industry approaches the limits of traditional scaling, heterogeneous bonding technology has become a key enabler for the ‘More Moore’ and ‘More than Moore’ strategies. This paper provides a systematic review of the interface mechanics principles of heterogeneous bonding, with a focus on thermodynamic and shell mechanics theories. The paper explores how factors such as wettability, surface roughness, and flatness affect the physical adsorption behavior of bonding interfaces, and analyzes the surface chemical conditions required for the formation of stable covalent and metallic bonds. By integrating multiple materials, heterogeneous bonding overcomes the limitations of traditional single-chip integration systems, opening up new possibilities for high-performance, multifunctional semiconductor devices. This technology has significant applications in areas such as 3D integration, power electronics, photonics, and AI chip development. The paper also reviews the specific applications of metallic bonding, covalent bonding, and van der Waals bonding in heterogeneous integration. Ultimately, heterogeneous bonding is expected to drive the next wave of innovation in semiconductor technology, laying the foundation for more integrated and energy-efficient solutions for complex electronic systems.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Numerical methods in engineering · Contact Mechanics and Variational Inequalities · Composite Material Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Jiangnan University
Funding
National Natural Science Foundation of China
References (100+)
Show source-provided references
1. 10.2307/268844410.2307/2688444 ↗
2. 10.1021/acsnano.5c0726010.1021/acsnano.5c07260 ↗
3. H. Li, Q. Li, and J. Lu, Ohmic-Contact Ballistic 2D InSe Transistors: Promising Candidates for More Moore Electronics, Science China Press Beijing, 2024.
4. 10.3390/mi1406114910.3390/mi14061149 ↗
5. M.J. Rosker, W.D. Palmer, T.-H. Chang, J.J. Maurer, and J. Hodiak, Next Revolution in Compound Semiconductor Materials, CS MANTECH Conference, Virtual, 2021.
6. 10.1146/annurev.matsci.28.1.21510.1146/annurev.matsci.28.1.215 ↗
7. 10.4028/www.scientific.net/SSP.47-48.3310.4028/www.scientific.net/SSP.47-48.33 ↗
8. L. Rayleigh, A study of glass surfaces in optical contact, Proc. R. Soc. Lond. A. Math. Phys. Sci. 153, (1936), pp. 326–349.
9. 10.3390/mi1402043210.3390/mi14020432 ↗
10. 10.1007/s10854-015-2892-810.1007/s10854-015-2892-8 ↗
11. 10.1108/eb04430110.1108/eb044301 ↗
12. E. Tatar, M.M. Torunbalci, S.E. Alper, and T. Akin, A method and electrical model for the anodic bonding of SOI and glass wafers, in 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), Paris, France, 2012.
13. F. Niklaus Adhesive wafer bonding for microelectronic and microelectromechanical systems PhD thesis. Royal Institute of Technology 2002.
14. 10.3390/ma1812272410.3390/ma18122724 ↗
15. J. Husson D. Frank and K.E. Walter Silver-glass paste for attachment of silicon die to ceramic substrate U.S. Patent (1987) No. 4 636 254.
16. 10.1016/j.mssp.2022.10680810.1016/j.mssp.2022.106808 ↗
17. 10.1179/174328006X10250110.1179/174328006X102501 ↗
18. 10.1021/acsami.5c1121410.1021/acsami.5c11214.s00110.1021/acsami.5c1121410.1021/acsami.5c11214.s001 ↗
19. H. Moriceau, A bright future for direct wafer bonding, Clefs Cea 52 (2005), pp. 44–46.
20. 10.3390/electronics1207166610.3390/electronics12071666 ↗
21. T. Nigussie, T.-H. Pan, S. Lipa, W.S. Pitts, J. DeLacruz, and P. Franzon, Design benefits of hybrid bonding for 3D integration, in 71st Electronic Components and Technology Conference (ECTC), IEEE, Virtual, 2021, pp. 1876–1881.
22. J.J.-Q. Lu, D. Zhang, and P. Ramm, Overview of bonding and assembly for 3D integration, in Handbook of 3D Integration, Volume 3: 3Dr Process Technology, P. Garrou, M. Koyanagi, and P. Ramm, eds. Wiley-VCH, 2014, pp. 261–278.
23. 10.1108/1356536111112730410.1108/13565361111127304 ↗
24. 10.1007/s11432-011-4226-710.1007/s11432-011-4226-7 ↗
25. L. Chang Heterogeneous nonlinear photonics Doctor Doctor of Philosophy diss University of California Santa Barbara 2019.
26. F. Niklaus Adhesive wafer bonding for microelectronic and microelectromechanical systems Ph.D.Royal Institute of Technology (KTH 2002.
27. 10.3390/mi1208094610.3390/mi12080946 ↗
28. G. Zhao, C. Song, and B. Wu, 3D integrated circuit (3D IC) technology and its applications, J. Ind. Eng. Appl. Sci. 2 (2024), pp. 60–65.
29. 10.1080/15599612.2020.185789010.1080/15599612.2020.1857890 ↗
30. 10.1109/LED.2011.217413610.1109/LED.2011.2174136 ↗
31. 10.1016/j.physe.2004.06.03010.1016/j.physe.2004.06.030 ↗
32. 10.1038/s41467-020-15005-510.1038/s41467-020-15005-5 ↗
33. 10.1021/cr500554n10.1021/cr500554n ↗
34. 10.26434/chemrxiv-2024-s75wv10.26434/chemrxiv-2024-s75wv ↗
35. 10.3390/s2004107210.3390/s20041072 ↗
36. 10.1002/pssa.20240052410.1002/pssa.202400524 ↗
37. D. Francisa and M. Kuballb, GaN-on-diamond materials 14 and device technology: A review, Therm. Manag. Gallium Nitride Electron. 14, (2022), pp. 295.10.1016/B978-0-12-821084-0.00006-8 ↗
38. 10.1063/1.512563710.1063/1.5125637 ↗
39. Q. Qian, H. Wan, Y. Zheng, H. Ma, Q. Wang, J. Cai, and D. Wang, An insertion-based mechanical interlock Cu-Sn bonding structure for three-dimensional integration, in 25th International Conference on Electronic Packaging Technology (ICEPT), Tianjin, China, 2024.
40. 10.1016/j.jallcom.2016.02.06510.1016/j.jallcom.2016.02.065 ↗
41. 10.1063/5.000206810.1063/5.0002068 ↗
42. 10.1002/smll.20230557410.1002/smll.202305574 ↗
43. 10.1109/TED.2023.324413410.1109/TED.2023.3244134 ↗
44. 10.1038/nnano.2012.6010.1038/nnano.2012.60 ↗
45. 10.1038/nmat351810.1038/nmat3518 ↗
46. 10.1021/acs.nanolett.9b0502710.1021/acs.nanolett.9b05027 ↗
47. J. Mannhar and A. Herrnberger, The interface is still the device, Nat. Mater. 11 (2012), pp. 91.10.1038/nmat3244 ↗
48. K. Klemen, Physics of Surfaces and Interfaces, GPL, 2006.
49. U. Goesele, Semiconductor wafer bonding: Science and technology,in Interface Science and Material Interconnection Proceedings of JIMIS, 1998, pp. 37–44.
50. 10.1126/science.aay344410.1126/science.aay3444 ↗
51. 10.1007/978-1-4899-2073-7_210.1007/978-1-4899-2073-7_2 ↗
52. J. Lennard and I. Jones, On the determination of molecular fields.—I. From the variation of the viscosity of a gas with temperature, Proceedings of the Royal Society of London. Series A, containing papers of a mathematical and physical character, 1924, 106), pp. 441–462.
53. K.L. Johnson K. Kendall and A. Roberts Surface energy and the contact of elastic solids Math. Phys. Sci. 324 (1971) pp. 301–313.10.1098/rspa.1971.0141 ↗
54. K. Hensel, Journal für die reine und angewandte Mathematik, 6, W. de Gruyter, 1830.
55. 10.1016/0021-9797(75)90018-110.1016/0021-9797(75)90018-1 ↗
56. 10.1080/1478644920946199010.1080/14786449209461990 ↗
57. D. Tabor, Surface forces and surface interactions, in Plenary and Invited Lectures, Elsevier, 1977, pp. 3–14.
58. Z. Yp, W. Ls, S. Kh, and T. Number, Adhesion parameter and elastic theory of micro-scale adhesive contact, Adv. Mech. 30 (2000), pp. 529–537.
59. K. Johnson Adhesion and friction between a smooth elastic spherical asperity and a plane surface Proc. R. Soc. Lond. A. Math. Phys. Eng. Sci. 453 (1997) pp. 163–179.10.1098/rspa.1997.0010 ↗
60. 10.1006/jcis.1997.498410.1006/jcis.1997.4984 ↗
61. 10.1016/0021-9797(92)90285-T10.1016/0021-9797(92)90285-T ↗
62. 10.1016/j.mee.2008.04.03810.1016/j.mee.2008.04.038 ↗
63. 10.1063/1.152179210.1063/1.1521792 ↗
64. 10.1098/rsta.1921.000610.1098/rsta.1921.0006 ↗
65. 10.1016/S0022-5096(97)00100-210.1016/S0022-5096(97)00100-2 ↗
66. 10.1088/0953-8984/20/31/31500710.1088/0953-8984/20/31/315007 ↗
67. 10.1088/0953-8984/17/1/R0110.1088/0953-8984/17/1/R01 ↗
68. 10.1140/epjb/s10051-024-00680-w10.1140/epjb/s10051-024-00680-w ↗
69. C. Majidi and G.G. Adams, A simplified formulation of adhesion problems with elastic plates, Proc. R. Soc. A. Math. Phys. Eng. Sci. 465, (2009), pp. 2217–2230.
70. N. Ip, N. Nejadsadeghi, and C. Fonseca, Multi-physics simulation of wafer-to-wafer bonding dynamics, in 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), IEEE, San Diego, CA, 2022, pp. 502–506.10.1109/ECTC51906.2022.00085 ↗
71. 10.1126/science.34757510.1126/science.347575 ↗
72. 10.1063/1.365636710.1063/1.3656367 ↗
73. G.S. Matijasevic, C.Y. Wang, and C.C. Lee, Thermal stress considerations in die-attachment, in Thermal Stress and Strain in Microelectronics Packaging, Springer, 1993, pp. 194–220.
74. 10.1063/1.479431910.1063/1.4794319 ↗
75. 10.1515/zpch-1889-041610.1515/zpch-1889-0416 ↗
76. 10.1007/s13391-024-00519-710.1007/s13391-024-00519-7 ↗
77. 10.3390/nano1317249010.3390/nano13172490 ↗
78. 10.3390/ma1617582210.3390/ma16175822 ↗
79. 10.1098/rsos.24045910.1098/rsos.240459 ↗
80. 10.1116/1.153771610.1116/1.1537716 ↗
81. 10.1002/ecjb.2024710.1002/ecjb.20247 ↗
82. S. Taniyama, Y. Wang, and M. Fujino, Room temperature wafer bonding using surface activated bonding method, in 2008 IEEE 9th VLSI Packaging Workshop of Japan, IEEE, Kyoto, Japan, 2008, pp. 141–144.10.1109/VPWJ.2008.4762236 ↗
83. 10.1109/TADVP.2008.92064410.1109/TADVP.2008.920644 ↗
84. 10.1063/1.34244310.1063/1.342443 ↗
85. J. Fuse, T. Iwata, and S. Ebiko, Robust measurement of bonding strength for wafer-to-wafer 3D integration, in 2023 International Conference on Electronics Packaging (ICEP), IEEE, Kumamoto, Japan, 2023, pp. 105–106.10.23919/ICEP58572.2023.10129784 ↗
86. 10.1063/1.11586510.1063/1.115865 ↗
87. 10.1016/S0924-4247(02)00380-110.1016/S0924-4247(02)00380-1 ↗
88. 10.1021/acsaelm.8b0009110.1021/acsaelm.8b00091 ↗
89. M. Gonzalez, K. Vanstreels, and O. Okudur O, Methodologies for characterization of W2W bonding strength, in 74th Electronic Components and Technology Conference (ECTC), IEEE, Denver, CO, 2024, pp. 790–797.
90. 10.1016/j.mee.2025.11238410.1016/j.mee.2025.112384 ↗
91. 10.1088/0022-3727/6/7/30510.1088/0022-3727/6/7/305 ↗
92. D. Smolyansky TDR techniques for characterization and modeling of electronic packaging High Density Interconnect Magazine (2001).
93. 10.1109/22.55202910.1109/22.552029 ↗
94. D. Scott, F. Duewer, and S. Kamath, A novel X-ray microtomography system with high resolution and throughput for non-destructive 3D imaging of advanced packages , in International Symposium for Testing and Failure Analysis, L. C. Wagner ed., ASM International, 2004, pp. 94–98.
95. M. Pacheco and D. Goyal, X-ray computed tomography for non-destructive failure analysis in microelectronics, in International Reliability Physics Symposium, IEEE, San Jose, CA, 2010, pp. 252–258.
96. 10.1109/TCPMT.2022.314446110.1109/TCPMT.2022.3144461 ↗
97. 10.1016/j.mee.2024.11214010.1016/j.mee.2024.112140 ↗
98. 10.1109/TED.2025.353086710.1109/TED.2025.3530867 ↗
99. O.P. Golim, Low-Temperature Solid-Liquid Interdiffusion Bonding for Heterogeneous Integration, Aalto University, 2025.
100. 10.1016/j.microrel.2021.11441210.1016/j.microrel.2021.114412 ↗