Influence of thermal treatment on electronic properties of inkjet-printed zinc oxide semiconductor
Source abstract
Abstract
Additive manufacturing of electronic devices using inkjet printing provides a potential alternative approach in substitution for conventional electronic fabrication processes. However, the complex nature of inkjet printing involves the liquid deposition and film formation from the vaporization of solvent, which makes it different from film created by conventional deposition methods. Inkjet printing of zinc oxide (ZnO), which is a widely utilized semiconductor, produces polycrystalline film composed of nano-size grains, which could significantly influence the properties of printed film. In this study, low-temperature annealing was employed to treat inkjet-printed ZnO for UV photodetection application, and its influence on electrical properties was studied. Band bending was characterized using the Mott-Schottky plot which examines the charge distribution of the films. It is found that the annealing of inkjet-printed polycrystalline ZnO film has improved its electrical properties, which could be attributed to the reduction of band bending due to the merging of grains. The treatment also helps to reduce impurities of the film, such as zinc hydroxide complexes, which is common for solution-derived films. Hence, the study could pay the way for the improvement of electrical properties of inkjet-printed functional materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanomaterials and Printing Technologies · Advanced Sensor and Energy Harvesting Materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Singapore Centre for 3D Printing, Nanyang Technological University, Singapore
Advanced Remanufacturing and Technology Centre, Singapore
School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore
Funding
Ministry of Education of Singapore
References (52)
Show source-provided references
1. 10.1002/adfm.20060043410.1002/adfm.200600434 ↗
2. 10.1039/C4NR03915G10.1039/C4NR03915G ↗
3. 10.1039/C6NR08220C10.1039/C6NR08220C ↗
4. 10.1063/1.271916210.1063/1.2719162 ↗
5. 10.1088/0957-4484/18/34/34520210.1088/0957-4484/18/34/345202 ↗
6. 10.1007/s00339-008-4597-910.1007/s00339-008-4597-9 ↗
7. 10.1002/adma.20170473810.1002/adma.201704738 ↗
8. 10.1002/admi.20210254810.1002/admi.202102548 ↗
9. 10.1002/adem.20210155810.1002/adem.202101558 ↗
10. 10.1002/adfm.20170595510.1002/adfm.201705955 ↗
11. 10.1016/j.orgel.2011.01.02310.1016/j.orgel.2011.01.023 ↗
12. 10.1002/aenm.20140043210.1002/aenm.201400432 ↗
13. 10.1002/adma.20140291810.1002/adma.201402918 ↗
14. 10.1016/j.tsf.2013.01.03210.1016/j.tsf.2013.01.032 ↗
15. 10.1109/LED.2022.316934510.1109/LED.2022.3169345 ↗
16. 10.1088/1361-6528/aa57ae10.1088/1361-6528/aa57ae ↗
17. 10.1021/acsanm.2c0114510.1021/acsanm.2c01145 ↗
18. 10.1039/C8RA01481G10.1039/C8RA01481G ↗
19. 10.1016/j.nanoen.2021.10577410.1016/j.nanoen.2021.105774 ↗
20. 10.1021/acsami.1c2447510.1021/acsami.1c24475 ↗
21. 10.1021/la203781x10.1021/la203781x ↗
22. 10.1186/1556-276X-8-48910.1186/1556-276X-8-489 ↗
23. 10.1021/cr300062610.1021/cr3000626 ↗
24. 10.1088/0268-1242/5/2/00110.1088/0268-1242/5/2/001 ↗
25. 10.1021/nn205097e10.1021/nn205097e ↗
26. 10.1038/ncomms500710.1038/ncomms5007 ↗
27. 10.1002/adma.20130436310.1002/adma.201304363 ↗
28. 10.1002/admi.20160106410.1002/admi.201601064 ↗
29. 10.1007/s00339-008-4925-010.1007/s00339-008-4925-0 ↗
30. 10.1007/s00339-012-6792-y10.1007/s00339-012-6792-y ↗
31. 10.1016/j.jcis.2003.10.00510.1016/j.jcis.2003.10.005 ↗
32. 10.1021/acs.jpcc.7b0214910.1021/acs.jpcc.7b02149 ↗
33. 10.1016/j.mssp.2015.09.00710.1016/j.mssp.2015.09.007 ↗
34. 10.1007/s00339-013-8164-710.1007/s00339-013-8164-7 ↗
35. Led D · Chem Comm · 2004 · 10 · 2294
36. 10.1016/j.solidstatesciences.2010.11.02410.1016/j.solidstatesciences.2010.11.024 ↗
37. 10.1021/cg500407r10.1021/cg500407r ↗
38. 10.1039/b211723c10.1039/b211723c ↗
39. 10.1021/acsami.6b0976610.1021/acsami.6b09766 ↗
40. 10.1063/1.32447710.1063/1.324477 ↗
41. 10.1021/ed084p68510.1021/ed084p685 ↗
42. 10.1116/1.58240610.1116/1.582406 ↗
43. 10.1002/pssa.20153250910.1002/pssa.201532509 ↗
44. 10.1021/am401533w10.1021/am401533w ↗
45. 10.1021/cg100017b10.1021/cg100017b ↗
46. 10.1016/j.sse.2012.03.00410.1016/j.sse.2012.03.004 ↗
47. 10.1039/c3tc31320d10.1039/c3tc31320d ↗
48. 10.1021/acsomega.7b0142010.1021/acsomega.7b01420 ↗
49. 10.1002/adma.20150151710.1002/adma.201501517 ↗
50. 10.1002/adom.20160027310.1002/adom.201600273 ↗
51. 10.1021/nl080370210.1021/nl0803702 ↗
52. 10.1002/pssa.20170017610.1002/pssa.201700176 ↗