The influence of boron doping level on quality and stability of diamond film on Ti substrate
Source abstract
Abstract
Abstract In this study, we investigate the influence of boron doping level on film quality and stability of boron doped diamond (BDD) film deposited on titanium substrate (Ti/BDD) using microwave plasma chemical vapor deposition system. The results demonstrate that high boron concentration will improve the film conductivity, whereas the diamond film quality and adhesion are deteriorated obviously. The increase of total internal stress in the film and the variation of components within the interlayer will weaken the coating adhesion. According to the analysis of electrode inactivation mechanism, high boron doping level will be harmful to the electrode stability in the view of diamond quality and adhesion deterioration. In this study, 5000 ppm B/C ratio in the reaction gas is optimized for Ti/BDD electrode preparation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
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References (19)
Show source-provided references
1. Influence of the surface termination on the electrochemical properties of boron-doped diamond (BDD) interfaces10.1016/j.elecom.2007.12.032 ↗
2. Application of diamond electrodes to electrochemical processes10.1016/j.electacta.2005.04.023 ↗
3. Electrocatalysis in the electrochemical conversion/combustion of organic pollutants for waste water treatment10.1016/0013-4686(94)85175-1 ↗
4. Electrochemical oxidation characteristics of p-substituted phenols using a boron-doped diamond electrode10.1021/es070955i ↗
5. Preparation and characterization of Ti/diamond electrodes10.1016/S0013-4686(98)00116-9 ↗
6. Surface and interface characterization of diamond coatings deposited on pure titanium10.1016/S0257-8972(99)00248-0 ↗
7. Energetics of Ti atom diffusion into diamond film10.1016/S0927-0256(01)00235-X ↗
8. In situ plasma diagnostics of the chemistry behind sulfur doping of CVD diamond films10.1016/S0925-9635(01)00576-3 ↗
9. Processing-structure-adhesion relationship in CVD diamond films on titanium substrates10.1016/S0925-9635(98)00251-9 ↗
10. Comparison of Ti/BDD and Ti/SnO2–Sb2O5 electrodes for pollutant oxidation10.1007/s10800-004-6068-0 ↗
11. The behavior of Ti-substrates during deposition of boron doped diamond10.1016/j.ijrmhm.2007.10.002 ↗
12. Electrochemically induced surface modifications in boron-doped diamond films: a Raman spectroscopy study10.1016/j.tsf.2004.11.169 ↗
13. Anodic oxidation of orange II on Ti/BDD electrode: variable effects10.1016/j.seppur.2005.07.024 ↗
14. Electrochemical characterisation and oxygen evolution at a heavily boron doped diamond electrode10.1016/j.electacta.2004.08.050 ↗
15. Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations10.1016/j.apsusc.2011.04.097 ↗
16. Residual stresses and crystalline quality of heavily boron-doped diamond films analysed by micro-Raman spectroscopy and X-ray diffraction10.1016/S0008-6223(03)00071-X ↗
17. Investigation of diamond coatings on titanium substrates for electrochemical applications10.1016/j.diamond.2004.01.025 ↗
18. Stress study of HFCVD boron-doped diamond films by X-ray diffraction measurements10.1016/S0925-9635(00)00522-7 ↗
19. Gradient layers of boron-doped diamond on titanium substrates10.1016/j.diamond.2007.01.023 ↗