Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices
Source abstract
Abstract
Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects. A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density (~µF cm−2). Recently, EDL gating technique, as an interfacial gating, is widely used in two-dimensional (2D) crystals for various sophisticated materials characterization and device applications. This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection, sensing, logic circuits, and neuromorphic computation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Research, Zhoupu Hospital Affiliated to Shanghai University of Medicine & Health Sciences, Shanghai, China
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China
Center on Nanoenergy Research, School of Chemistry and Chemical Engineering, Guangxi University, Nanning, China
Funding
National Key Research and Development Program of China · National Natural Science Foundation of China · Beijing Nova Program · Chinese Academy of Sciences
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