journal article·2021-03

Phase controllable synthesis of SnSe and SnSe2 films with tunable photoresponse properties

Donglin Lu, Chao Yue, Siwei Luo, Zhenqing Li, Wenming Xue, Xiang Qi, Jianxin Zhong

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Abstract

Abstract Nanomaterials have lots of crystal phases that are distinct from their bulk structures, and show striking structure-dependent properties, which deserve further investigation and in-depth understanding. Here, we report on the growth of highly crystalline SnSe and SnSe2 films by heating the single precursor SnSe powder via vapor deposition. The synergistic effect of heating temperature and substrate temperature in the crystal growth process determines the phase construction of samples. Proper heating temperature (650~700 °C) combined with a slow substrate temperature (~210 °C) is beneficial for SnSe2 to grow, while high substrate temperature (~380 °C) is helpful to grow SnSe. The phase diagram depending on the heating temperature and substrate temperature of samples growth has been revealed, which provides guidance for future synthesizing of the materials with a controlled stage construction. The as-grown SnSe and SnSe2 films exhibit tunable photoresponse properties, which boost the practical application of the films in photodectors.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (36)

Show source-provided references
1. Crystal phase control in two-dimensional materials10.1007/s11426-018-9326-y ↗
2. Two-dimensional transistors beyond graphene and TMDCs10.1039/C8CS00318A ↗
3. Comparative study of potential applications of graphene, MoS2, and other two-dimensional materials in energy devices, sensors, and related areas10.1021/am509096x ↗
4. Band structure engineering in 2D materials for optoelectronic applications10.1002/admt.201800072 ↗
5. Booming development of group IV-VI semiconductors: Fresh blood of 2D family10.1002/advs.201600177 ↗
6. Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors10.1016/j.apmt.2018.12.010 ↗
7. Ultrathin SnSe2 flakes grown by chemical vapor deposition for high-performance photodetectors10.1002/adma.201503873 ↗
8. Chemical vapor deposition of thin crystals of layered semiconductor SnS2 for fast photodetection application10.1021/nl503857r ↗
9. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals10.1038/nature13184 ↗
10. Lattice dynamics in monolayer and few-layer SnSe210.1103/PhysRevB.96.035401 ↗
11. Phase controlled synthesis of SnSe and SnSe2 hierarchical nanostructures made of single crystalline ultrathin nanosheets10.1039/C4CE01868K ↗
12. Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties10.1039/C5NR05989E ↗
13. SnSe2 nanoplate-graphene composites as anode materials for lithium ion batteries10.1039/c1cc10317b ↗
14. Phase-engineered SnSex toward SnSe2/SnSe heterostructure with improved thermal conductance by a low-temperature plasma-assisted chemical vapor reaction10.1016/j.nanoen.2017.11.064 ↗
15. Synthesis of high-quality large-area homogenous 1T' MoTe2 from chemical vapor deposition10.1002/adma.201602687 ↗
16. tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition growth of large-area, few-layer MoTe210.1021/acsnano.6b08109 ↗
17. Atmospheric pressure chemical vapour deposition of SnSe and SnSe2 thin films on glass10.1016/j.tsf.2007.08.100 ↗
18. Thermodynamic pathway for the formation of SnSe and SnSe2 polycrystalline thin films by selenization of metal precursors10.1039/c3ce41537f ↗
19. Aqueous phase one-pot green synthesis of SnSe nanosheets in a protein matrix: negligible cytotoxicity and room temperature emission in the visible region10.1039/C5RA09448H ↗
20. Morphology controlled synthesis of low bandgap SnSe2 with high photodetectivity10.1039/C8NR08138G ↗
21. Lateral heterostructures formed by thermally converting n-Type SnSe2 to p-Type SnSe10.1021/acsami.8b01235 ↗
22. Preparation and photoelectrochemical properties of SnS/SnSe and SnSe/SnS bilayer structures fabricated via electrodeposition10.1016/j.apsusc.2019.04.104 ↗
23. Band gap engineering of hexagonal SnSe2 nanostructured thin films for infra-red photodetection10.1038/s41598-017-15519-x ↗
24. Thermodynamics and Kinetics Synergetic Phase-engineering of chemical vapor deposition grown single crystal MoTe2 nanosheets10.1021/acs.cgd.7b01624 ↗
25. Phase equilibrium in binary systems AIVBVI
26. Ultrasonic spray pyrolysis deposition of SnSe and SnSe2 using a single spray solution10.1088/1674-4926/34/1/013001 ↗
27. Tin Selenide (SnSe): growth, properties, and applications10.1002/advs.201700602 ↗
28. Highly polarization-sensitive, broadband, self-powered photodetector based on Graphene/PdSe2/Germanium heterojunction10.1021/acsnano.9b03994 ↗
29. In situ fabrication of 2D WS2/Si Type-II Heterojunction for self-powered broadband photodetector with response up to mid-infrared10.1021/acsphotonics.8b01675 ↗
30. Mixed-dimensional PdSe2/SiNWAheterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing10.1039/C9TA13611H ↗
31. An ultrasensitive self-driven broadband photodetector based on a 2D-WS2/GaAs type-II Zener heterojunction10.1039/C9NR10348A ↗
32. Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction10.1038/nnano.2015.112 ↗
33. Infrared photodetectors based on reduced graphene oxide and graphene nanoribbons10.1002/adma.201101414 ↗
34. High performance and bendable few-layered InSe photodetectors with broad spectral response10.1021/nl500817g ↗
35. Ultrasensitive flexible near-infrared photodetectors based on Van der Waals Bi2Te3 nanoplates10.1016/j.apsusc.2019.03.295 ↗
36. Ultrasensitive photodetectors based on monolayer MoS210.1038/nnano.2013.100 ↗