Engineering the Maxwell–Wagner polarization effect
Source abstract
Abstract
Layered structures, when supporting the Maxwell–Wagner polarization mechanism, exhibit very large effective electric permittivity and thus can be used for miniaturizing purposes. However, the large interfacial dimensions evolved, limit the Maxwell–Wagner polarization at relatively low frequencies. Any element or mechanism that causes a spatial variation of charge density, contributes to the dielectric susceptibility of a medium. Thus, intentionally planted polarization states can be used for further exploiting the Maxwell–Wagner polarization mechanism.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Microwave and Dielectric Measurement Techniques · Microwave Dielectric Ceramics Synthesis · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
Show source-provided references
1. MIS slow-wave structures over a wide range of parameters10.1109/22.179875 ↗
2. A parallel-plate waveguide approach to microminiaturized, planar transmission lines for integrated circuits10.1109/TMTT.1967.1126505 ↗
3. Properties of microstrip line on Si– SiO2 system10.1109/TMTT.1971.1127658 ↗
4. Towards a microstrip antenna on synthetic high-dielectric constant substrates
5. Micro-scale low pass filters based on the Maxwell–Wagner phenomenon
6. A miniaturized delay line based on slow-wave substrates
7. Microstrip stepped impedance low pass filters based on the Maxwell–Wagner polarization mechanism
8. Von Hippel · 1954
9. Characterization of micromachined coplanar waveguides on silicon up to 300GHz
10. Permittivity characterization of low-K thin films from transmission-line measurements10.1109/TMTT.2002.806925 ↗
11. Effect of finite metallization and inhomogeneous dopings on slow-wave-mode propagation10.1109/22.641761 ↗
12. The Stopping and Range of Ions in Matter (SRIM) Software, http://www.srim.org, 2008.