Formation of Color Centers in Silicon Under Irradiation: Quantum Technologies and Defect Engineering Strategies
Source abstract
Abstract
Irradiation can impact the properties of semiconductor materials and the function of microelectronic devices. In the present review, we consider how irradiation interacts with semiconductor materials important, primarily silicon (Si), focusing on the defect processes. These, in turn, will have an impact on the physical properties of the material and can impact important properties for devices such as the electrical conductivity and mechanical integrity. We consider the ways that irradiation impacts the operation of microelectronic devices. We thereafter review the defect engineering strategies and other ways to mitigate against the impact of irradiation in devices. Finally, we consider the potentially important role of irradiation defects as qubits in the emerging quantum technologies.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Radiation Effects in Electronics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of Thessaly, 38221 Volos, Greece
School of Chemistry, University of Nottingham, Nottingham NG7 2RD, UK
Institute of Informatics and Telecommunication, National Center for Scientific Research Demokritos, Agia Paraskevi, 15341 Athens, Greece
Institute of Nanoscience and Nanotechnology, National Center for Scientific Research Demokritos, Agia Paraskevi, 15310 Athens, Greece
Physics Department, Solid State Physics Section, National and Kapodistrian University of Athens, Panepistimiopolis Zografos, 15784 Athens, Greece
Department of Materials, Imperial College London, London SW7 2AZ, UK
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