Laser Truncation of Silicon Nanowires Fabricated by Ag-Assisted Chemical Etching for Reliable Electrode Deposition in Solar Cells

Silicon nanowires (SiNWs) fabricated by Ag-assisted metal-assisted chemical etching (MACE) exhibit excellent light-trapping performance, yet their fragile high-aspect-ratio morphology severely limits reliable metallization in photovoltaic devices. Conventional electrode deposition methods often fail on dense SiNW arrays due to poor mechanical stability of the nanowire tips, leading to delamination, inhomogeneous coverage, and high contact resistance. In this work, we introduce a maskless laser-based truncation technique that selectively shortens MACE-derived SiNWs to controlled residual heights of 300–500 nm exclusively within the regions intended for electrode formation, while preserving the full nanowire morphology in active areas. A detailed parametric study of laser power, scanning speed, and pulse repetition frequency allowed the identification of an optimal processing window enabling controlled tip melting without damaging the nanowire roots or the crystalline silicon substrate. High-resolution SEM imaging confirms uniform planarization, well-preserved structural integrity, and the absence of subsurface defects in the laser-processed tracks. Optical reflectance measurements further demonstrate that introducing 2% and 5% truncated surface fractions—corresponding to the minimum and maximum metallized front-grid coverage in industrial Si solar cells—results in only a minimal reflectance increase, preserving the advantageous the light-trapping behavior of the SiNW texture. The proposed laser truncation approach provides a clean, scalable, and industrially compatible route toward creating electrode-ready surfaces on nanostructured silicon, enabling reliable metallization while maintaining optical performance. This method offers strong potential for integration into silicon photovoltaics, photodetectors, and nanoscale electronic and sensing devices.