Development of a Low-Particle Emission Linear Atmospheric Plasma Device for Hydrophilization of Silicon Wafers
Source abstract
Abstract
We developed a low-particle emission linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
FIRST, Institute of Innovative Research, Institute of Science Tokyo, J2-32, 4259 Nagatsuta, Midori-ku, Yokohama 226-8501, Japan
Department of Electrical and Electronic Engineering, Institute of Science Tokyo, Building No. 9, Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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