A Si-based bulk FinFET by novel etching process with mask-less and photoresist-free lithography technique

In this study, we used maskless and photoresist–free nano injection lithography (NIL) to develop a sub–10 nm fin width for a Si–based fin field–effect transistor (FinFET) with a 50–nm fin pitch. The active layer was fabricated using double alignment technology (electron–beam lithography and NIL), and the fin trench was filled perfectly by using a high–density plasma chemical vapour deposition process. Advanced plasma and wet etching processes were employed to obtain the fin height. The fabricated FinFET could provide a pathfinding solution for the continuous scaling of complementary metal oxide semiconductor technology.