Optical Interband Transitions in Fully Strained Ge1−xSnx Alloys
Source abstract
Abstract
The optical transition characteristics of fully strained Ge1−xSnx films grown on Ge substrate were investigated by high-resolution X-ray diffraction (HRXRD) and spectroscopic ellipsometry (SE). The results showed Sn composition-dependent nonlinear behaviors in interband transition energies. The influence of strain on nonlinear behaviors was identified by the ratio of bowing parameters. Optical transition energies are largely tuned due to the strain-induced band structure. The strain in GeSn alloys may be responsible for the fluctuation of interband transition energies. The effect of full strain appears to result in an opposite trend in the direct and indirect band gap energies. The transition from indirect-to-direct band gap semiconductor in the present work is determined to be x = 0.103 at 300 K. These results contribute to further exploration into band gap engineering for mid-infrared optoelectronic materials.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Phase-change materials and chalcogenides · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic and Optical Engineering, Nanjing University of Science and Technology ZiJin College, Nanjing 210046, China
References (37)
Show source-provided references
1. Optical Properties of Si1−xGex Quantum Dots Grown using RPCVD10.1007/s13391-011-0606-9 ↗
2. Ge1−x−ySixSny light emitting diodes on silicon for mid-infrared photonic applications10.1063/1.4931770 ↗
3. Theoretical investigation of tensile strained GeSn waveguide with Si3N4 liner stressor for mid-infrared detector and modulator applications10.1364/OE.23.007924 ↗
4. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer10.1063/1.4840135 ↗
5. GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers10.1021/acsphotonics.8b01116 ↗
6. Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon10.1063/5.0197018 ↗
7. GeSn μ-LED Array with Programmable Spectra for Near-Infrared Microspectrometer10.1021/acsphotonics.4c02449 ↗
8. High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system10.1364/PRJ.514764 ↗
9. Interband Transitions in SnxGe1−x Alloys10.1103/PhysRevLett.79.1937 ↗
10. Determination of the optical energy gap of Ge1−xSnx alloys with 0 < x < 0.1410.1063/1.1758772 ↗
11. Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny/Ge1−xSix study10.1103/PhysRevB.73.125207 ↗
12. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1−x alloys10.1103/PhysRevB.78.161203 ↗
13. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing10.1063/1.4813913 ↗
14. Achieving direct band gap in germanium through integration of Sn alloying and external strain10.1063/1.4792649 ↗
15. Compositional dependence of the direct and indirect band gaps in Ge1−ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials10.1088/0268-1242/29/11/115028 ↗
16. A hybrid functional first-principles study on the band structure of non-strained Ge1−xSnx alloys10.1088/1674-1056/26/12/127402 ↗
17. Direct bandgap transition for emission in GeSn nanowires10.1515/ntrev-2025-0215 ↗
18. The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) by molecular beam epitaxy10.1039/D3RA06774B ↗
19. Simulation investigation of tensile strained GeSn fin photodetector with Si3N4 liner stressor for extension of absorption wavelength10.1364/OE.23.000739 ↗
20. Tensile strained GeSn on Si by solid phase epitaxy10.1063/1.4790302 ↗
21. High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition10.1063/1.3559231 ↗
22. Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering10.1002/adom.202201024 ↗
23. Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain10.1109/LED.2020.3041051 ↗
24. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys10.1038/s41566-020-0601-5 ↗
25. Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain10.1364/OL.476517 ↗
26. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon10.1063/1.3521391 ↗
27. Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties10.1063/1.3326162 ↗
28. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy10.1063/1.3692735 ↗
29. Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys10.1016/j.sse.2015.01.015 ↗
30. Nonlinear structure-composition relationships in the Ge1−ySny/Si(100) (y < 0.15) system10.1103/PhysRevB.84.035204 ↗
31. Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate10.1063/1.4804675 ↗
32. Epitaxial growth of Ge1−xSnx films with x up to 0.14 grown on Ge (00l) at low temperature10.1088/1674-1056/23/8/088112 ↗
33. Optical constants and interband transitions of Ge1−xSnx alloys (x < 0.2) grown on Si by UHV-CVD10.1016/j.tsf.2003.11.277 ↗
34. Temperature dependence of the dielectric function of gerriianium10.1103/PhysRevB.30.1979 ↗
35. Temperature dependence of the dielectric function and interband critical points in silicon10.1103/PhysRevB.36.4821 ↗
36. Nonlinear behavior of the energy gap in Ge1−xSnx alloys at 4 K10.1063/1.2800296 ↗
37. SnGe superstructure materials for Si-based infrared optoelectronics10.1063/1.1622435 ↗