A Fully Integrated High Linearity CMOS Dual-Band Power Amplifier for WLAN Applications in 55-Nm CMOS
Source abstract
Abstract
This paper presents a dual-band fully integrated high linearity CMOS power amplifier (PA). The PA employs a reconfigurable transformer in the input matching network to achieve low reflection coefficient across both bands, demonstrating significant flexibility in the design of dual-band power amplifiers with high output powers. Additionally, a detailed design methodology for the dual-band matching network is introduced. By utilizing this methodology, the PA has been designed using 55 nm CMOS technology. For continuous-wave operation, the PA achieves a saturated power (Psat) of 28.03 dBm and 27.5–28.2 dBm, with power-added efficiency (PAE) of 33.2% and 24.6–31.1%, in the 2.4 GHz and 5 GHz WLAN bands, respectively. Concurrently, the PA power cells, which employ multi-gate transistor (MGTR) technology, achieve an intermodulation distortion (IMD3) of below 30 dBc at an output power of 15 dBm in both the 2.4 GHz and 5 GHz WLAN bands. The proposed PA outperforms other dual-band or multi-band PAs in terms of output power and exhibits great potential for WLAN applications.
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Research context
OpenAlex topics: Radio Frequency Integrated Circuit Design · Advanced Power Amplifier Design · Microwave Engineering and Waveguides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhejiang CASEMIC Electronics Technology Co., Ltd., Hangzhou 310051, China
Funding
Hangzhou Science and Technology Development
References (31)
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