Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN
Source abstract
Abstract
Scattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering of excitons by free carriers in monolayer hexagonal boron nitride encapsulated by a dielectric medium. We describe the excitonic states by variational wave functions, modeling the electrostatic interaction via the Rytova–Keldysh potential. Making the distinction between elastic and inelastic scattering, the relevance of each transition between excitonic states is also considered. Finally, we discuss the contribution of free carrier scattering to the excitonic linewidth, analyzing both its temperature and carrier density dependence.
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Research context
OpenAlex topics: Thermal properties of materials · Boron and Carbon Nanomaterials Research · 2D Materials and Applications
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Affiliations
Department of Physics, Physics Center of Minho, Campus of Gualtar, Porto Universities (CF–UM–UP), 4710-057 Braga, Portugal
International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
Funding
International Nanotechnology Laboratory (INL) · Portuguese Foundation for Science and Technology · European Commission
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