Study of the Photo-Response of Doped GaAs with Aging
Source abstract
Abstract
The aging of semiconductor materials is a topic of current interest. We studied the photo-response of epitaxial samples of GaAs doped with Ge and Sn up to 1 × 1019 atoms cm−3. These samples were stored in a dry and dark environment for 26 years. We realized photoluminescence measurements at different temperatures and photoreflectance spectra at 300 K in three periods: 1995, 2001 and 2021. We found that environmental oxygen formed defects in GaAs, leaving lattice vacancies that provoked changes in the optical photo-response. In addition, we found that the vacancy concentrations could be as large as 5 × 1017 atoms cm−3 over the 26 years. In this work, we demonstrate that the aging of semiconductor materials occurs even when they are not used within a functioning circuit, with the changes being greater when the material is not doped. Knowing about the aging of materials is important for the industry, particularly for the semiconductor industry, because aging-induced deterioration influences prices and guarantees.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · GaN-based semiconductor devices and materials · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Grupo de Investigacion en Fisica del Estado Solido, Universidad de la Guajira, Rihoacha 440007, Colombia
Instituto Interdisciplinario de las Ciencias, Universidad del Quindio, Armenia 630001, Colombia
Funding
Instituto Interdisciplinario de las Ciencias, Universidad del Quindio · Universidad de la Guajira
References (23)
Show source-provided references
1. Systematic investigation on stability influence factors for organic solar cells10.1016/j.nanoen.2022.107299 ↗
2. Khan, S., Agbo, I., Hamdouil, S., Kukner, H., Kaczer, B., Raghavan, P., and Catthoor, F. (2014, January 24–28). Bias temperature instability analysis of FinFET based SRAM cells. Proceedings of the 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE), Dresden, Germany.10.7873/DATE2014.044 ↗
3. Lifetime prediction of encapsulated CdSexS1-x quantum platelets for color conversion in high luminance LED microdisplays10.1364/OE.480567 ↗
4. Measurement Results of Real Circuit Delay Degradation under Realistic Workload10.2197/ipsjtsldm.16.27 ↗
5. Precipitation promotion of highly emissive and stable CsPbX3 (Cl, Br, I) perovskite quantum dots in borosilicate glass with alkaline earth modification10.1016/j.ceramint.2022.10.205 ↗
6. Atomic layer deposition for nanoscale10.1088/2631-7990/acb46d ↗
7. Sol-Ageing Effect on the Structural and Optical Properties of Undoped and Doped ZrO2 Thin Films10.1134/S2070205122050136 ↗
8. Song, Y., Lv, Z., Niu, S., Wu, Z., Qin, L., Chen, Y., Liang, L., Lei, Y., Jia, P., and Shan, X. (2022). Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor lasers. Crystals, 12.10.3390/cryst12060765 ↗
9. Long-term aging of CVD grown 2D-MoS2 nanosheets in ambient environment10.1038/s41529-022-00288-4 ↗
10. Woo Ultra-Stable and Highly Efficient White Light Emitting Diodes through CsPbBr3 Perovskite nanocrystals Silica Composite Phosphor Functionalized with Surface Phenyl Molecules10.1002/smll.202206311 ↗
11. A high-efficiency aging test with new data processing method for semiconductor device10.1016/j.microrel.2023.114940 ↗
12. Neuhold, I., Noga, P., Sojak, S., Petriska, M., Degmova, J., Slugen, V., and Krsjak, V. (2023). Application of Proton Irradiation in the Study of Accelerated Radiation Ageing in a GAAs semiconductor. Materials, 16.10.3390/ma16031089 ↗
13. Photoluminescence and photoreflectance studies of defects in GaAs epitaxial layers grown by liquid phase epitaxy at different supercooling temperatures10.1116/1.580950 ↗
14. Fonthal, G. (2001). Estudio de la Impurificacion de Capas Epitaxiales de GaAs y AlGaAs en el Rango de Leve Hasta Fuerte Dopaje por Medio de Fotoluminiscencia y Fotorreflectancia, Universidad del valle.
15. Photoluminescence of AlxGa1−xAs alloys10.1063/1.355769 ↗
16. Lifetime of excitons in GaAs quantum well
17. Radiative transitions induced in gallium arsenide by modest heat treatment10.1063/1.327316 ↗
18. Monte Carlo study of vacancy mediated impurity diffusion in silicon10.1103/PhysRevB.61.R2397 ↗
19. Zambrano, S., Fonthal, G., Salas, G.E.E., and Ortega, J.S. (2023). Formation of point defects due to aging under natural conditions of doped GaAs. Materials.
20. Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP10.1088/1361-6463/ac2643 ↗
21. Band-gap narrowing in novel III-V semiconductors10.1063/1.346291 ↗
22. Slow decay of photoconductivity caused by tin-related DX centers in AlGaAs10.1023/A:1021297325747 ↗
23. Electronic structure of neutral and charged vacancies in GaAs10.1103/PhysRevB.41.5979 ↗