The Sliding-Aperture Transform and Its Applicability to Deep-Level Transient Spectroscopy
Source abstract
Abstract
A mathematical method is presented for the extraction of defect parameters from the multiexponential decays generated during deep-level transient spectroscopy experiments. Such transient phenomenon results from the ionization of charge trapped in defects located in the depletion width of a semiconductor diode. From digitized transients acquired at fixed temperatures, this method produces a rate–domain spectral signature associated with all defects in the semiconductor. For signal-to-noise ratio of 1000, defect levels with carrier emission rates differing by as little as 1.5 times may be distinguished.
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Engineering Department, University of Massachusetts Boston, Boston, MA 02125, USA
Physics Department, University of Central Florida, Orlando, FL 32816, USA
Air Force Research Laboratory, Space Vehicles Directorate, Kirtland AFB, Albuquerque, NM 87117, USA
Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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