Hot Carrier Photocurrent through MOS Structure
Source abstract
Abstract
Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character. Its rise is based on the hot carrier phenomenon; no carrier generation is present, only redistribution of laser-heated carriers takes place at the semiconductor surface. The magnitude of this displacement current is related to the capacitance of the structure and is dependent on the rate of the laser pulse change as well as on the laser light intensity. This effect can find application in the detection of fast infrared laser pulses as well as in the development of infrared photovaractors. Operation of such devices would not require cryogenic temperatures what is usually needed by the long-wavelength infrared semiconductor technique.
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Research context
OpenAlex topics: Laser Material Processing Techniques · Laser Design and Applications · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Vilnius Gediminas Technical University, LT-10223 Vilnius, Lithuania
Laboratory of Electronic Processes, Center for Physical Sciences and Technology, LT-10257 Vilnius, Lithuania
Funding
Lietuvos Mokslo Taryba
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