journal article·2021-02-08Open access

Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

Chunkao Ruan, Yongyi Chen, Li Qin, Peng Jia, Yugang Zeng, Yue Song, Yuxin Lei, Zhijun Zhang, Nan Zhang, Zaijin Li

Applied Sciences· Volume 11· Issue 4

Abstract

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.
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Research context

OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Advanced Fiber Laser Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Center of Materials Science and Optoele, University of Chinese Academy of Sciences, Beijing 100049, China

Peng Cheng Laboratory No. 2, Xingke 1st Street, Nanshan, Shenzhen 518066, China

Liaoning Institute of Science and Technology, Benxi 117004, China

Academician Team Innovation Center of Hainan Province, Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, School of Physics and Electronic Engineering, Hainan Normal University, Haikou 570206, China

Funding

National Science and Technology Major Project of China · Frontier Science Key Program of the President of the Chinese Academy of Sciences · National Natural Science Foundation of China (NSFC) · Science and Technology Development Project of Jilin Province · Special Scientific Research Project of Academician Innovation Platform in Hainan Province · Dawn Talent Training Program of CIOMP. Independent Innovation Project of State Key Laboratory of Luminescence and Applications

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