Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors
Source abstract
Abstract
We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded. The cylinder is p-doped. The surrounding material is n-doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a PN junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thermoelastic and Magnetoelastic Phenomena · Thermal properties of materials · Composite Material Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (42)
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