Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering
Source abstract
Abstract
Photogeneration of excess charge carriers in semiconductors produces electronic strain. Under transient conditions, electron-hole pairs may be separated across a potential barrier. Using time-resolved X-ray diffraction measurements across an intrinsic AlGaAs/n-doped GaAs interface, we find that the electronic strain is only produced by holes, and that electrons are not directly observable by strain measurements. The presence of photoinduced charge carriers in the n-doped GaAs is indirectly confirmed by delayed heat generation via recombination.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Thermal properties of materials · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Korea Research Institute of Standards and Science, Daejeon 305-340, Korea
Department of Nanoscience, University of Science and Technology (UST), Daejeon 305-340, Korea
Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA
Physics Department, DePaul University, Chicago, IL 60614, USA
Funding
National Research Foundation of Korea
References (20)
Show source-provided references
1. Deformation Potentials and Mobilities in Non-Polar Crystals10.1103/PhysRev.80.72 ↗
2. Habermehl, C.L., and Newell, J.T. (1969). Electronic Pressure-Sensitive Semiconductor Device. (3,470,392), U.S. Patent.
3. Photostriction effect in germanium10.1002/pssb.19610010403 ↗
4. Effect of electronic strain on photoacoustic generation in silicon10.1063/1.96374 ↗
5. Photo-induced strain imaging of semiconductors10.1063/1.4979922 ↗
6. Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends10.1103/PhysRevB.60.5404 ↗
7. Ultrafast acoustic phonon ballistics in semiconductor heterostructures10.1103/PhysRevLett.78.3358 ↗
8. Time-resolved X-ray diffraction from coherent phonons during a laser-induced phase transition10.1103/PhysRevLett.84.111 ↗
9. Generation and propagation of a picosecond acoustic pulse at a buried interface: Time-resolved X-ray diffraction measurements10.1103/PhysRevLett.95.246104 ↗
10. Direct measurements of multi-photon induced nonlinear lattice dynamics in semiconductors via time-resolved X-ray scattering10.1038/srep39506 ↗
11. Picosecond X-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons10.1038/srep19140 ↗
12. Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved X-ray scattering10.1063/1.5039582 ↗
13. Layer specific observation of slow thermal equilibration in ultrathin metallic nanostructures by femtosecond X-ray diffraction
14. Time-Resolved Research at the Advanced Photon Source Beamline 7-ID10.1063/1.3463168 ↗
15. EPICS oscilloscope for time-resolved data acquisition10.1016/j.nima.2010.12.243 ↗
16. Surface generation and detection of phonons by picosecond light pulses10.1103/PhysRevB.34.4129 ↗
17. Transient strain driven by a dense electron-hole plasma10.1103/PhysRevLett.91.165502 ↗
18. Thermal transport in a semiconductor heterostructure measured by time-resolved X-ray diffraction10.1103/PhysRevB.78.045317 ↗
19. Dynamical X-ray diffraction from nonuniform crystalline films: Application to X-ray rocking curve analysis10.1063/1.336759 ↗
20. Method of transfer matrices and dynamical thick-crystal approximation in surface X-ray diffraction by multilayer structures