A 2.4 GHz-Band 250 W, 60% Feedback-Type GaN-HFET Oscillator Using Imbalanced Coupling Resonator for Use in the Microwave Oven
Source abstract
Abstract
Circuit design techniques for enhancing an efficiency of the high power feedback-type GaN-HFET (Gallium Nitride Heterojunction Field Effect Transistor) oscillator for use in the microwave oven are shown in this paper, focusing primarily on the harmonic terminations for high efficiency of power amplifiers, the coupling factor to feedback circuits and the insertion phase adjustment of feedback loops. With the use of these circuit design techniques, an output power of 263 W and an efficiency of 61.3% have been successfully achieved at 2.44 GHz.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Radio Frequency Integrated Circuit Design · Advanced Power Amplifier Design
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Affiliations
Industrial Solutions Company, Panasonic Corporation, Osaka 571-8506, Japan
Electrical and Electronics Engineering, Shonan Institute of Technology, Kanagawa 251-8511, Japan
References (13)
Show source-provided references
1. RF Energy Systems: Realizing New Applications
2. Computer Modeling in the Development of Mechanisms of Control over Microwave Heating in Solid-State Energy Systems
3. Yakovlev, V. (2015, January 17–22). Frequency Control over the Heating Patterns in a Solid-State Dual-Source Microwave Oven. Proceedings of the IEEE MTT-S International Microwave Symposium, Phoenix, AZ, USA.10.1109/MWSYM.2015.7166948 ↗
4. Ikeda, H., Kamiyama, T., Nitta, T., Uno, T., Iwata, M., and Yahata, K. (2015, January 4–5). 1.2 kW Power Combiner Unit using Phase Control for 2.4 GHz band. Proceedings of the IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), Kyoto, Japan.10.1109/IMFEDK.2015.7158582 ↗
5. Shi, T., and Li, K. (2012, January 17–22). High power solid-state oscillator for microwave oven applications. Proceedings of the IEEE/MTT-S International Microwave Symposium Digest, Montreal, QC, Canada.
6. Shi, T., and Li, K. (2012, January 29–30). High power solid-state DRO with power booster. Proceedings of the 2012 7th European Microwave Integrated Circuit Conference, Amsterdam, The Netherlands.
7. Kim, S.H., Kim, H.J., Shin, S.W., Kim, J.D., Kim, B.K., and Choi, J.J. (2011, January 5–10). Combined power oscillator using GaN HEMT. Proceedings of the 2011 IEEE MTT-S International Microwave Symposium, Baltimore, MD, USA.10.1109/MWSYM.2011.5973551 ↗
8. Ikeda, H., and Itoh, Y. (, January June). 2.4 GHz-Band High Power and High Efficiency Solid-State Injection-Locked Oscillator Using Imbalanced Coupling Resonator. Proceedings of the 2017 IEEE MTT-S International Microwave Symposium (IMS), Honolulu, HI, USA.10.1109/MWSYM.2017.8058592 ↗
9. 2.4 GHz-band high power and high efficiency solid-state injection-locked oscillator10.1109/TMTT.2018.2836393 ↗
10. Lindberg, E. (2010, January 26–28). The Barkhausen criterion (observation?). Proceedings of the IEEE Workshop Nonlinear Dynamics Electronic Systems, Dresden, Germany.
11. Behaviors of class-F and class-F−1 amplifiers10.1109/TMTT.2012.2190749 ↗
12. Liu, Z., Chen, X., Yang, M., and Liu, C. (2017, January 4–9). Experimental studies on a low power injection-locked continuous wave magnetron. Proceedings of the 2017 IEEE MTT-S International Microwave Symposium, Honolulu, HI, USA.10.1109/MWSYM.2017.8058595 ↗
13. (2019, July 15). Coaxial Resonator. Available online: http://daiken-chem.co.jp/en/q3-top/q3-seihin.html#tem.