Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions
Source abstract
Abstract
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS) at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm. Optimized devices also show excellent current saturation, an important feature for analog performance.
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Research context
OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices · Nanowire Synthesis and Applications
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Affiliations
Peter-Grünberg-Institute (PGI 9), JARA-Fundamentals for Future Technology, Forschungszentrum Jülich, 52428 Jülich, Germany
HNF, Forschungszentrum Jülich, 52428 Jülich, Germany
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