Preparation and Solar-Energy Applications of PbS Quantum Dots via In Situ Methods

In situ preparation routes have become central to advancing lead sulfide (PbS) quantum dots (QDs) for solar-energy conversion, owing to their ability to create strongly coupled QD/oxide interfaces that are difficult to achieve with ex situ colloidal methods, along with their simplicity and potential for low-cost, scalable processing. This review systematically examines the fundamental mechanisms, processing levers, and device implications of the dominant in situ approaches successive ionic layer adsorption and reaction (SILAR), voltage-assisted SILAR (V-SILAR), and chemical bath deposition (CBD). These methods enable conformal QD nucleation within mesoporous scaffolds, improved electronic coupling, and scalable low-temperature fabrication, forming the materials foundation for high-performance PbS-based architectures. We further discuss how these in situ strategies translate into enhanced solar-energy applications, including quantum-dot-sensitized solar cells (QDSSCs) and photoelectrochemical (PEC) hydrogen production, highlighting recent advances in interfacial passivation, scaffold optimization, and bias-assisted growth that collectively suppress recombination and boost photocurrent utilization. Representative device metrics reported in recent studies indicate that in-situ-grown PbS quantum dots can deliver photocurrent densities on the order of ~5 mA cm−2 at applied potentials around 1.23 V versus RHE in photoelectrochemical systems, while PbS-based quantum-dot-sensitized solar cells typically achieve power conversion efficiencies in the range of ~4–10%, depending on interface engineering and device architecture. These performances are commonly associated with conformal PbS loading within mesoporous scaffolds and quantum-dot sizes in the few-nanometer regime, underscoring the critical role of morphology and interfacial control in charge transport and recombination. Recent studies indicate that performance improvements in PbS-based solar-energy devices are primarily governed by interfacial charge-transfer kinetics and recombination suppression rather than QD loading alone, with hybrid heterostructures and inorganic passivation layers playing a key role in modifying band offsets and surface trap densities at the PbS/oxide interface. Remaining challenges are associated with defect-mediated recombination, transport limitations in densely loaded porous scaffolds, and long-term chemical stability, which must be addressed to enable scalable and durable PbS-based photovoltaic and photoelectrochemical technologies.