journal article·2025-10-27Open access

Enhanced Performance of Inverted Perovskite Solar Cells Employing NiOx and Cu-Doped NiOx Nanoparticle Hole Transport Layers

Ponmudi Selvan Thiruchelvan, Chien-Chih Lai, Chih-Hung Tsai

Applied Sciences· Volume 15· Issue 21

Abstract

In this study, p-type NiOx and Cu-doped NiOx nanoparticles (NPs) were synthesized by a simple chemical precipitation method and used as hole transport layers (HTLs) for inverted perovskite solar cells (PSCs). The microstructural property, surface morphology, elemental composition, optical property, charge recombination, and surface topography of the NiOx and Cu-NiOx HTLs were comprehensively characterized. The results showed that the NiOx and Cu-NiOx NPs were uniformly coated on the substrates without pinholes or voids. Cu incorporation into NiOx did not change its crystalline nature and considerably improved its electrical conductivity. The Cu-NiOx HTLs exhibited superior photoluminescence quenching and the least lifetime decay, which indicated that Cu-NiOx exhibited higher charge transport than NiOx HTLs. The fabricated PSC performances were further analyzed using current density–voltage characteristics, external quantum efficiency, and electrochemical impedance spectroscopy. The PSCs with PEDOT:PSS, NiOx, and 2% Cu-NiOx HTLs exhibited power conversion efficiencies of 11.93%, 13.72%, and 15.54%, respectively. The 2% Cu-NiOx HTL-based device showed the best performance compared with the PEDOT:PSS- and NiOx-based devices. Academic Editors: Chunyang Zhang, Dou Zhang
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · TiO2 Photocatalysis and Solar Cells · Nanomaterials and Printing Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Hindustan Institute of Technology and Science, Chennai 603103, Tamilnadu, India

Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan

Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan

Funding

Ministry of Science and Technology (MOST) of Taiwan

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