Simultaneous Submicron Temperature Mapping of Substrate and Channel in P-GaN/AlGaN/GaN HEMTs Using Raman Thermometry
Source abstract
Abstract
In this study, we introduce a high-resolution, high-speed thermal imaging technique using Raman spectroscopy to simultaneously measure the temperature of a substrate and a channel. By modifying the Raman spectrometer, we achieved a measurement speed faster than commercial spectrometers. This system demonstrated a sub-micron spatial resolution and the ability to measure the temperatures of the Si substrate and GaN channel simultaneously. During high-current operation, we observed significant self-heating in the GaN channel, with hotspots 100 °C higher than the surroundings, while the Si substrate showed an even temperature distribution. The ability to detect hotspots can help secure the reliability of devices through early failure analysis and can also be used for improvement research to reduce hotspots. These findings highlight the potential of this technique for early defect inspection and device improvement research. This study provides a novel and effective method for measuring the sub-micron resolution temperature distribution in devices, which can be applied to various semiconductor devices, including SiC-based power devices.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Kongju National University, 56, Gongjudaehak-ro, Gongju-si 32588, Chungcheongnam-do, Republic of Korea
AccuOptotec Co., 56, Gongjudaehak-ro, Gongju-si 32588, Chungcheongnam-do, Republic of Korea
School of Electronic and Electrical Engineering, Hongik University, 94, Wausan-ro, Mapo-gu, Seoul-si 04066, Gyeonggi-do, Republic of Korea
ChipsK Co., 11-31, Simin-daero 327beon-gil, Dongan-gu, Anyang-si 14055, Gyeonggi-do, Republic of Korea
UJL Co., 87, Gunjacheon-ro 21beon-gil, Siheung-si 15101, Gyeonggi-do, Republic of Korea
Funding
Korea Evaluation Institute of Industrial Technology (KEIT) grant funded by the Ministry of Trade, Industry and Energy, Republic of Korea · [Gyeonggi-do Testbed Utilization Semiconductor Technology Department Project] managed by the Advanced Institute of Convergence Technology with financial resources from Gyeonggi-do
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