A perspective on the advanced manufacturing of p-type 2D materials and devices
Source abstract
Abstract
Abstract Two-dimensional (2D) semiconductors are poised to transform next-generation electronics and optoelectronics through their atomic-scale bodies and exceptional tunability by external fields. While n-type 2D materials such as molybdenum disulfide (MoS 2 ) and indium selenide (InSe) have achieved near-industrial performance, progress in high-quality p-type counterparts has lagged significantly. This imbalance constrains the integration of complementary metal–oxide–semiconductor (CMOS) and limits the realization of efficient 2D p–n junctions for advanced optoelectronics. Overcoming these challenges demands innovations in active channel design, contact engineering, and interface passivation. In this Perspective, we discuss recent advances in the manufacturing of advanced p-type 2D materials and devices, and highlight emerging directions for enabling scalable, high-performance p-type 2D material technologies.
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Research context
OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
City University of Hong Kong
Funding
The Research Grant Council of Hong Kong · The Start-Up Grant of City University of Hong Kong
References (100+)
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