Preparation of organic N-fused perylenediimide-MXene hybrid material for robust versatile memristive device
Source abstract
Abstract
Abstract Two-dimensional (2D) MXene nanomaterials have shown great promise for electronic devices, attributed to their metal-resembling conductivity and abundant surface functional groups. However, the utilization of intrinsic property of MXene in memristors remains challenging due to its free electron conducting behavior rather than semiconducting property. Here, a N-fused perylenediimide organic semiconductor (CBIN) with conjugated skeleton and heteroatoms (O, S, N) is designed to successfully actuate the surface modification of MXene. The organic CBIN-decorated MXene demonstrates remarkable bipolar memristive properties, such as low threshold voltages of approximate ±1.4 V, exalted retention time exceeding 104 s, and outstanding environmental stability even after exposure to ultraviolet and x-ray irradiations. Furthermore, the CBIN-MXene hybrid memristive device can mimic synaptic plasticity and holds potential for information encoding as quick response codes and image recognition processing. This study provides efficient guidelines for implementing MXene-based memristors by organic semiconductor modulation and opens up possibilities of extending their functionalities into information encryption and neuromorphic computing applications.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · MXene and MAX Phase Materials · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (57)
Show source-provided references
1. In-memory computing with resistive switching devices10.1038/s41928-018-0092-2 ↗
2. Memory devices and applications for in-memory computing10.1038/s41565-020-0655-z ↗
3. Ultralow-power in-memory computing based on ferroelectric memcapacitor network10.1002/EXP.20220126 ↗
4. Resistive switching crossbar arrays based on layered materials10.1002/adma.202205402 ↗
5. Memristive switching in two-dimensional BiSe crystals10.1007/s12274-022-4974-2 ↗
6. Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane10.1016/j.jcis.2021.10.126 ↗
7. Analog nanoscale electro-optical synapses for neuromorphic computing applications10.1021/acsnano.1c04654 ↗
8. Emerging 2D memory devices for in-memory computing10.1002/adma.202007081 ↗
9. Organic frameworks memristor: an emerging candidate for data storage, artificial synapse, and neuromorphic device10.1002/adfm.202312658 ↗
10. 90% yield production of polymer nano-memristor for in-memory computing10.1038/s41467-021-22243-8 ↗
11. Protons: critical species for resistive switching in interface-type memristors10.1002/aelm.202200816 ↗
12. Multilevel resistive switching memristor based on silk fibroin/graphene oxide with image reconstruction functionality10.1016/j.cej.2023.144678 ↗
13. Controllable resistive switching of STO:Ag/SiO2-based memristor synapse for neuromorphic computing10.1016/j.jmst.2021.04.071 ↗
14. A reconfigurable optoelectronic synaptic transistor with stable Zr-CsPbI3 nanocrystals for visuomorphic computing10.1002/adma.202208497 ↗
15. Integrated memory devices based on 2D materials10.1002/adma.202201880 ↗
16. Manufacturing of graphene based synaptic devices for optoelectronic applications10.1088/2631-7990/acee2e ↗
17. CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review10.1088/2631-7990/acef79 ↗
18. Stimuli-responsive memristive materials for artificial synapses and neuromorphic computing10.1002/adma.202006469 ↗
19. Signal filtering enabled by spike voltage-dependent plasticity in metalloporphyrin-based memristors10.1002/adma.202104370 ↗
20. Ultra-fast switching memristors based on two-dimensional materials10.1038/s41467-024-46372-y ↗
21. Memristors based on 2D materials as an artificial synapse for neuromorphic electronics10.1002/adma.202002092 ↗
22. Recent advances in in-memory computing: exploring memristor and memtransistor arrays with 2D materials10.1007/s40820-024-01335-2 ↗
23. Synthesis of donor–acceptor gridarenes with tunable electronic structures for synaptic learning memristor10.1021/acsomega.9b00172 ↗
24. Fundamentals of MXene synthesis10.1038/s44160-022-00104-6 ↗
25. MXene chemistry, electrochemistry and energy storage applications10.1038/s41570-022-00384-8 ↗
26. Preparation of MXene-based hybrids and their application in neuromorphic devices10.1088/2631-7990/ad1573 ↗
27. Emerging MXene-based memristors for in-memory, neuromorphic computing, and logic operation10.1002/adfm.202208320 ↗
28. Surface functionalization of single-layered Ti3C2Tx MXene and its application in multilevel resistive memory10.1021/acsami.9b16979 ↗
29. Ti3C2-based MXene oxide nanosheets for resistive memory and synaptic learning applications10.1021/acsami.0c19028 ↗
30. Flexible, transparent, and wafer-scale artificial synapse array based on TiOx/Ti3C2Tx film for neuromorphic computing10.1002/adma.202303737 ↗
31. Oxidation stability of Ti3C2Tx MXene nanosheets in solvents and composite films10.1038/s41699-019-0089-3 ↗
32. Ambient-stable two-dimensional titanium carbide (MXene) enabled by iodine etching10.1002/anie.202015627 ↗
33. High-permittivity solvents increase MXene stability and stacking order enabling ultraefficient terahertz shielding10.1002/advs.202305099 ↗
34. High concentration of Ti3C2Tx MXene in organic solvent10.1021/acsnano.0c10671 ↗
35. Facile azabenz-annulations through UV-induced photocyclization: a promising method for perylenediimide-based organic semiconductors10.1002/asia.202101323 ↗
36. Unsupervised learning implemented by Ti3C2-MXene-based memristive neuromorphic system10.1021/acsaelm.0c00705 ↗
37. Effect of Ti3AlC2 MAX phase on structure and properties of resultant Ti3C2Tx MXene10.1021/acsanm.9b00286 ↗
38. Raman spectroscopy analysis of the structure and surface chemistry of Ti3C2Tx MXene10.1021/acs.chemmater.0c00359 ↗
39. Facile synthesis of Ti3C2Tx–poly(vinylpyrrolidone) nanocomposites for nonvolatile memory devices with low switching voltage10.1021/acsami.9b13711 ↗
40. All-optically controlled memristor for optoelectronic neuromorphic computing10.1002/adfm.202005582 ↗
41. Low-cost fabricated MgSnO electrolyte-gated synaptic transistor with dual modulation of excitation and inhibition10.1002/aelm.202200864 ↗
42. Short-term synaptic plasticity in emerging devices for neuromorphic computing10.1016/j.isci.2023.106315 ↗
43. Organic optoelectronic synapse based on photon-modulated electrochemical doping10.1038/s41566-023-01232-x ↗
44. Energy-efficient organic ferroelectric tunnel junction memristors for neuromorphic computing10.1002/aelm.201800795 ↗
45. Memristor with Ag-cluster-doped TiO2 films as artificial synapse for neuroinspired computing10.1002/adfm.201705320 ↗
46. Alloy electrode engineering in memristors for emulating the biological synapse10.1039/D1NR06144E ↗
47. Memristive synapses and neurons for bioinspired computing10.1002/aelm.201900287 ↗
48. High-performance flexible polymer memristor based on stable filamentary switching10.1021/acs.nanolett.2c02765 ↗
49. Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging10.1038/s41467-021-27575-z ↗
50. Effect of the threshold kinetics on the filament relaxation behavior of Ag-based diffusive memristors10.1002/adfm.202111242 ↗
51. Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor10.1039/C9TC06565B ↗
52. Quasi-volatile MoS2 barristor memory for 1T compact neuron by correlative charges trapping and schottky barrier modulation10.1021/acsami.2c18561 ↗
53. Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation10.1007/s10854-021-06138-4 ↗
54. Greatly enhanced breakdown strength of Pt/LNO/BST/Au thin films by regulating the space charge limited current though the dielectrics/electrode interface modification10.1016/j.jallcom.2020.154883 ↗
55. Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor10.1016/j.jssc.2022.123731 ↗
56. Resistive random-access memory based on ratioed memristors10.1038/s41928-018-0115-z ↗
57. High-performance memristors based on ultrathin 2D copper chalcogenides10.1002/adma.202108313 ↗