Combinatorial Composition Films and Dielectric Properties of Ba _x Sr _{1‐ x} TiO ₃ Grown on Two‐Inch p ‐Si using PLD Process

Combinatorial composition films of Ba _x Sr _{1‐ x} TiO ₃ were grown on two‐inch p ‐Si by pulsed laser deposition. Large areas of six different combinatorial composition films were grown on the same wafer using three primary target materials. Consequently, the deposition of Ba _0.5 Sr _0.5 TiO ₃ films was obtained from targets BaTiO ₃ and SrTiO ₃ , the deposition of Ba _0.3 Sr _0.7 TiO ₃ films was obtained from targets SrTiO ₃ and Ba _0.6 Sr _0.4 TiO ₃ , and the Ba _0.8 Sr _0.2 TiO ₃ film was obtained from targets Ba _0.6 Sr _0.4 TiO ₃ and BaTiO ₃ . The results indicate that the deposited materials are perovskite structures with high dielectric constants ranging from 49.4 to 193.2 and leakage current densities as low as 1.25 × 10 ⁻⁷ A/cm ² at −2V.