Influence of Quality of Mounting Process of RF Transistors on Their Thermal Parameters and Lifetime
Source abstract
Abstract
The paper presents the results of investigations illustrating the influence of imperfections in the soldering process on thermal properties of transistors operating in RF (Radio Frequency) systems. The methods of measurements used to determine the junction and case temperature of the tested transistors and their thermal resistance are described. The results of the performed measurements are presented and discussed, and their statistical analysis is carried out. The correlation between thermal parameters of the tested transistors, parameters of the assembly process and the measurement conditions is investigated. Some calculation results illustrating an influence of device thermal resistance and dissipated power on changing its lifetime are shown and discussed. It is also shown that no correlation between the void sizes and the device thermal resistance and lifetime is observed. Possibilities of improving the assembly process are indicated, which allows extending the expected lifetime of the tested transistors.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · Semiconductor Lasers and Optical Devices · 3D IC and TSV technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Marine Electronics, Faculty of Electrical Engineering, Gdynia Maritime University, Morska 81-87, 81-225 Gdynia, Poland
Flex, 83-100 Tczew, Poland
Funding
Ministry of Science and Higher Education
References (53)
Show source-provided references
1. Schwebert, B. (2022, June 13). The RF Power Amplifier, Part 1: Functions. Available online: https://www.analogictips.com/rf-power-amplifier-part-1-functions-faq.
2. Schwebert, B. (2022, June 13). The RF Power Amplifier, Part 2: Considerations. Available online: https://www.analogictips.com/rf-power-amplifier-part-2-considerations-faq.
3. Colantonio, P., Giannini, F., Giofre, R., and Piazzon, L. The Doherty Power Amplifier. Advanced Microwave Circuits and Systems, IntechOpen. Available online: https://www.intechopen.com/chapters/9648.
4. Sajedin, M., Elfergani, I., Rodriguez, J., Abd-Alhameed, R., and Barciela, M.F. (2019). A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications. Electronics, 8.10.3390/electronics8060717 ↗
5. Selected problems of construction and assembly of RF circuits
6. Wang, B., Dong, S., Jiang, S., He, C., Hu, J., Ye, H., and Ding, X. (2019). A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs. Energies, 12.10.3390/en12061146 ↗
7. Hong, S.-Z., and Chen, S.-L. (2021). ESD Design and Analysis by Drain Electrode-Embedded Horizontal Schottky Elements for HV nLDMOSs. Electronics, 10.10.3390/electronics10020178 ↗
8. Balagula, R.M., Subačius, L., Jorudas, J., Janonis, V., Prystawko, P., Grabowski, M., and Kašalynas, I. (2022). High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials, 15.10.3390/ma15062066 ↗
9. Kovatch, J., RF, A.M., and Bothell, W.A. (2022, June 13). 5 Steps to Selecting the Right RF Power Amplifier. Available online: https://www.arww-modularrf.com/PDFs/articles/5Steps.pdf.
10. Compact modeling of high-voltage LDMOS devices including quasi-saturation10.1109/TED.2006.870423 ↗
11. Comparative Analysis of VDMOS/LDMOS Power Transistors for RF Amplifiers10.1109/TMTT.2009.2031932 ↗
12. Theeuwen, S., Mollee, H., Heeres, R., and Van Rijs, F. (2018, January 23–25). LDMOS Technology for Power Amplifiers Up to 12 GHz. Proceedings of the 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain.10.23919/EuMIC.2018.8539904 ↗
13. Korta, J., and Skruch, P. (2020). Koncepcja Integracji Komory Parowej z Obudową Układów Elektronicznych w celu Zwiększenia ich Niezawodności, Akademia Górniczo—Hutnicza im, Stanisława Staszica w Krakowie, Wydział Elektrotechniki, Automatyki, Informatyki i Inżynierii Biomedycznej.
14. Raj, E. (2013). Systemy Chłodzenia Mikrokanałowego w Elektronice, Politechnika Łódzka. zeszyty naukowe nr 1172, rozprawy naukowe, Z. 472.
15. Korcala, A. (2022, June 13). Moc i Ciepło w Układach Elektronicznych, Odprowadzanie Ciepła VII, Podstawy Projektowania. Available online: https://docplayer.pl/400500-Moc-i-cieplo-w-ukladach-elektronicznych.html.
16. Compact thermal models of semiconductor devices—A review
17. A new evaluation method of thermal transient measurement results10.1016/S0026-2692(96)00031-6 ↗
18. Liebhard, I.V., and John, H. (2008). A Heat Transfer Textbook, Phlogiston Press. [3rd ed.].
19. Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review10.1109/TPEL.2011.2178433 ↗
20. Pietruszka, A., Górecki, P., Wroński, S., Illés, B., and Skwarek, A. (2021). The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs). Appl. Sci., 11.10.3390/app11125583 ↗
21. Investigations of an influence of the assembling method of the die to the case on thermal parameters of IGBTs10.1109/TCPMT.2021.3108468 ↗
22. The influence of a soldering manner on thermal properties of LED modules10.1108/SSMT-10-2017-0026 ↗
23. Górecki, K., Ptak, P., Torzewicz, T., and Janicki, M. (2020). Influence of a Thermal Pad on Selected Parameters of Power LEDs. Energies, 13.10.3390/en13143732 ↗
24. (2022, June 13). IPC Standards, Deliver on Consistency, Reliability and Quality. Available online: https://www.ipc.org/ipc-standards.
25. Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer10.1109/LMWC.2005.858999 ↗
26. A WCDMA Multiband Power Amplifier Module With Si-CMOS/GaAs-HBT Hybrid Power-Stage Configuration10.1109/TMTT.2016.2520461 ↗
27. Electrothermal characterization of silicon-on-glass VDMOSFETs10.1016/j.microrel.2004.08.015 ↗
28. Thermal analysis of microwave GaN-HEMTs in conventional and flip-chip assemblies10.1002/mmce.21513 ↗
29. Khlybov, A., Rodionov, D., Panteleev, A., and Timoshenkov, P. (2021, January 26–29). The Analysis of Power RF GaN Transistors Thermal Parameters in Pulse Mode. Proceedings of the 2021 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (ELCONRUS), Saint Petersburg, Russia.10.1109/ElConRus51938.2021.9396223 ↗
30. A Nonlinear Electro-Thermal Scalable Model for High-Power RF LDMOS Transistors10.1109/TMTT.2008.2011172 ↗
31. Study of impact ionization effect on power RF N-LDMOS transistor after thermal pulsed RF life test10.1016/j.csite.2022.101950 ↗
32. Belaid, M., and Almusallam, A. (2021, January 23). Thermal effect on performance of N-MOSFET transistor under pulsed RF tests. Proceedings of the 2021 27th International Workshop on Thermal Investigations of ICS and Systems (THERMINIC), Berlin, Germany.10.1109/THERMINIC52472.2021.9626537 ↗
33. Investigation of Transient Thermal Characteristics of Microwave Transistors
34. Gao, J., Wang, S., and Wang, J. (2020, January 17–20). Thermal Resistance Model of Packaging for RF High Power Devices. Proceedings of the 2020 International Conference on Microwave and Milimeter Wave Technology (ICMMT), Shanghai, China.10.1109/ICMMT49418.2020.9386437 ↗
35. (2022, June 13). BLC9G22LS-160VT, Power LDMOS Transistor, Product Data Sheet. Available online: https://www.ampleon.com/documents/data-sheet/BLC9G22LS-160VT.pdf.
36. (2022, June 13). BLC10G22LS-240PVT, Power LDMOS Transistor, Product Data Sheet. Available online: https://www.ampleon.com/documents/data-sheet/BLC10G22LS-240PVT.pdf.
37. (2022, June 13). Welcome to Surface Mount Process. Available online: https://www.surfacemountprocess.com/.
38. Diagnostyka i naprawy modułów elektronicznych w trakcie procesu produkcyjnego10.15199/48.2021.05.23 ↗
39. Akao, Y. (1994). Development History of Quality Function Deployment. The Customer Driven Approach to Quality Planning and Deployment, Asian Productivity Organization.
40. Blackburn, D.L. (2004, January 11). Temperature measurements of semiconductor devices—A review. Proceedings of the Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium, San Jose, CA, USA.
41. Influence of packaging processes and temperature on characteristics of Schottky diodes made of SiC10.1109/TCPMT.2019.2894970 ↗
42. Górecki, K., and Posobkiewicz, K. (2021). Selected problems of power MOSFETs thermal parameters measurements. Energies, 14.10.3390/en14248353 ↗
43. (2022, June 13). Optris Infrared Cameras. Available online: https://www.optris.global/infrared-cameras.
44. The analysis of accuracy of the selected methods of measuring thermal resistance of IGBTs10.1515/mms-2015-0036 ↗
45. Górecki, K., Ptak, P., Janicki, M., and Napieralska, M. (2021). Comparison of properties for selected experimental set-ups dedicated to measuring thermal parameters of power LEDs. Energies, 14.10.3390/en14113240 ↗
46. Six Sigma Methodologies and its Application in Manufacturing Firms
47. Activation Energy for End-of-Life Solder Bond Degradation: Thermal Cycling of Field-Aged PV Modules10.1109/JPHOTOV.2020.3025726 ↗
48. Alam, M.S., Basit, M., Suhling, J.C., and Lall, P. (June, January 31). Mechanical characterization of SAC305 lead free solder at high temperatures. Proceedings of the 2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Las Vegas, NV, USA.10.1109/ITHERM.2016.7517622 ↗
49. Reliability analysis of power MOSFET’s with the help of compact models and circuit simulation10.1016/S0026-2714(02)00198-1 ↗
50. A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechnisms in power semiconductors10.1016/S0026-2714(02)00206-8 ↗
51. Wróblewski, A.K. (1983). Encyklopedia Fizyki Współczesnej, PWN.
52. Gładysz, H., Brzuszkiewicz, T., and Żukowski, A. (1989). Niezawodność Przyrządów Półprzewodnikowych, Wydawnictwo Przemysłowe WEMA.
53. Six Sigma: A literature review10.1108/20401461011075017 ↗