Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment
Source abstract
Abstract
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipment, we propose changes in the voltage and temperature of the electrostatic chuck, plasma discharge sequence, gas flow, and pressure parameters during the etching process. The proposed edge particle reduction method was developed by analyzing particle maps after wafer etching. Edge particle adherence in plasma etching equipment can be reduced by decreasing the voltage and temperature changes of the electrostatic chuck and generating a plasma sheath with a continuous discharge sequence of radio-frequency plasma. The gas pressure and flow rate also affect the number of wafer edge particles. Experimental results were used to optimize the equipment parameters to reduce edge particle contamination and improve edge wafer defects after dry etching.
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Research context
OpenAlex topics: Plasma Diagnostics and Applications · Dust and Plasma Wave Phenomena · Aerosol Filtration and Electrostatic Precipitation
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mechanical Engineering, National Yang Ming Chiao Tung University, Hsinchu City 30010, Taiwan
References (27)
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