Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator
Source abstract
Abstract
In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium–gallium–zinc oxide thin-film transistors (IGZO-TFTs) with high-k ZrO2 dielectric layers were demonstrated, and the electrical performance and bias stability were investigated in detail. By spin-coating 0.3 M precursor six times, a dense ZrO2 film, with smoother surface and fewer defects, was fabricated. The TFT devices with optimal ZrO2 dielectric exhibit a saturation mobility up to 12.7 cm2 V−1 s−1, and an on/off ratio as high as 7.6 × 105. The offset of the threshold voltage was less than 0.6 V under positive and negative bias stress for 3600 s.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China
Funding
National Key R&D Program of China · National Natural Science Foundation of China · National Key Basic Research and Development Program of China · MOST, Guangdong Natural Science Foundation · Guangdong Science and Technology Project · Guangzhou Science and Technology Project · the Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme
References (31)
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