Solving a System of Differential Equations Containing a Diffusion Equation with Nonlinear Terms on the Example of Laser Heating in Silicon
Source abstract
Abstract
We present a finite-difference integration algorithm for solution of a system of differential equations containing a diffusion equation with nonlinear terms. The approach is based on Crank–Nicolson method with predictor–corrector algorithm and provides high stability and precision. Using a specific example of short-pulse laser interaction with semiconductors, we give a detailed description of the method and apply it to the solution of the corresponding system of differential equations, one of which is a nonlinear diffusion equation. The calculated dynamics of the energy density and the number density of photoexcited free carriers upon the absorption of laser energy are presented for the irradiated thin silicon film. The energy conservation within 0.2 % has been achieved for the time step 10 8 times larger than that in case of the explicit scheme, for the chosen numerical setup. The implemented Fortran source code is available in the Supplementary Materials. We also present a few examples of successful application of the method demonstrating its benefits for the theoretical studies of laser–matter interaction problems. Finally, possible extension to 2 and 3 dimensions is discussed.
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Research context
OpenAlex topics: Laser Material Processing Techniques · Thin-Film Transistor Technologies · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and OPTIMAS Research Center, Technical University of Kaiserslautern, 67663 Kaiserslautern, Germany
Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, 34125 Kassel, Germany
Center for Free-Electron Laser Science CFEL, Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
P. N. Lebedev Physical Institute of Russian Acad. Sci., 119991 Moscow, Russia
Funding
Deutsche Forschungsgemeinschaft
References (45)
Show source-provided references
1. Wu, Z., Zhao, J., Yin, J., and Li, H. (2001). Nonlinear Diffusion Equations, World Scientific.10.1142/9789812799791 ↗
2. Singular solutions of the diffusion equation of population genetics10.1016/j.jtbi.2007.04.016 ↗
3. Bower, J.M., and Bolouri, H. (2004). Computational Modeling of Genetic and Biochemical Networks, MIT Press.
4. Aubert, G., and Kornprobst, P. (2006). Mathematical Problems in Image Processing: Partial Differential Equations and the Calculus of Variations, Springer Science & Business Media.10.1007/978-0-387-44588-5 ↗
5. Nagasawa, M. (2012). Schrödinger Equations and Diffusion Theory, Springer Science & Business Media.
6. Bäuerle, D.W. (2011). Laser Processing and Chemistry, Springer Science & Business Media.10.1007/978-3-642-17613-5 ↗
7. Laser ablation and micromachining with ultrashort laser pulses10.1109/3.631270 ↗
8. Femtosecond, picosecond and nanosecond laser ablation of solids10.1007/BF01567637 ↗
9. Femtosecond laser micromachining in transparent materials10.1038/nphoton.2008.47 ↗
10. Ultrafast and direct imprint of nanostructures in silicon10.1038/nature00792 ↗
11. Generation of high spatial frequency ripples on silicon under ultrashort laser pulses irradiation10.1063/1.3593493 ↗
12. Nucleation and propagation of dislocations during nanopore lattice mending by laser annealing: Modified continuum-atomistic modeling10.1103/PhysRevB.77.125408 ↗
13. Biomimetic micro/nanostructured functional surfaces for microfluidic and tissue engineering applications10.1063/1.3553235 ↗
14. Micromachining along a curve: Femtosecond laser micromachining of curved profiles in diamond and silicon using accelerating beams10.1063/1.4745925 ↗
15. High aspect ratio nanochannel machining using single shot femtosecond Bessel beams10.1063/1.3479419 ↗
16. Electron emission from metal surfaces exposed to ultrashort laser pulses
17. Kinetics of high-density plasmas generated in Si by 1.06-and 0.53-mkm picosecond laser pulses10.1103/PhysRevB.35.8166 ↗
18. Combined atomistic-continuum modeling of short-pulse laser melting and disintegration of metal films10.1103/PhysRevB.68.064114 ↗
19. Numerical investigation of ultrashort laser damage in semiconductors10.1016/j.ijheatmasstransfer.2004.09.015 ↗
20. Isaacson, E., and Keller, H.B. (2012). Analysis of Numerical Methods, Dover Publications.
21. A practical method for numerical evaluation of solutions of partial differential equations of the heat-conduction type10.1017/S0305004100023197 ↗
22. Cebeci, T. (2002). Convective Heat Transfer, Springer.10.1007/978-3-662-06406-1 ↗
23. Molecular dynamics study of the short laser pulse ablation: Quality and efficiency in production10.1007/s00339-014-8633-7 ↗
24. Laser damage in silicon: Energy absorption, relaxation, and transport10.1063/1.4891633 ↗
25. Atomistic-continuum modeling of short laser pulse melting of Si targets10.1103/PhysRevB.90.245306 ↗
26. Temporal evolution of photoinduced thermal strain in InSb probed by ultra-short laser produced Cu Kα x-rays10.1063/1.5108879 ↗
27. Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effects10.1103/PhysRevB.26.2147 ↗
28. Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses10.1063/1.331020 ↗
29. Improved value for the silicon intrinsic carrier concentration from 275 to 375 K10.1063/1.349645 ↗
30. Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting10.1103/PhysRevB.23.2923 ↗
31. Phenomenological model for pisosecond-pulse laser annealing of semiconductors10.1063/1.333007 ↗
32. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP10.1149/1.2134410 ↗
33. A unified wide temperature range model for the energy gap, the effective carrier mass and intrinsic concentration in silicon10.1016/0038-1101(93)90046-S ↗
34. Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures10.1063/1.93454 ↗
35. Optical functions of silicon between 1.7 and 4.7 eV at elevated temperatures10.1103/PhysRevB.27.7466 ↗
36. Auger coefficients for highly doped and highly excited silicon10.1063/1.89694 ↗
37. Transition rate for impact ionization in the approximation of a parabolic band structure10.1103/PhysRevB.27.4833 ↗
38. Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs10.1063/1.327469 ↗
39. Ioffe Physical-Technical Institute (2019, November 10). Electronic Archive “New Semiconductor Materials. Characteristics and Properties”; Silicon Properties. Available online: http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/.
40. Free Software Foundation (2019, November 10). The GNU Scientific Library (gsl-1.15). Available online: https://www.gnu.org/software/gsl.
41. Thomas, L. (1949). Elliptic Problems in Linear Differential Equations over a Network: Watson Scientific Computing Laboratory, Columbia Univ.
42. Modifying single-crystalline silicon by femtosecond laser pulses: An analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy10.1016/S0169-4332(03)00881-X ↗
43. Lipp, V.P. (2015). Atomistic-Continuum Modeling of Ultrafast Laser-Induced Melting of Silicon Targets. [Ph.D. Thesis, University of Kassel].10.1103/PhysRevB.90.245306 ↗
44. Wang, T.Y., Lee, Y.M., and Chen, C.C.P. (2003, January 6–9). 3D thermal-ADI: An efficient chip-level transient thermal simulator. Proceedings of the 2003 International Symposium on Physical Design, Monterey, CA, USA.10.1145/640000.640007 ↗
45. The numerical solution of parabolic and elliptic differential equations10.1137/0103003 ↗