Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor
Source abstract
Abstract
We have studied the variations in the temperature-dependent absorption edge of a bulk InSe-layered semiconductor using photoconductivity (PC) measurements. From both the X-ray diffraction (XRD) and Raman experimental results, the structural phase of the as-prepared InSe sample was confirmed to be γ-polytype. Upon heating from 15 K to 300 K, the absorption edge of PC spectra was found to shift significantly toward lower energy, and the absorption edge as a function of temperature was further analyzed by the Varshni’s relationship and Bose–Einstein empirical equation. The Urbach energy as a function of temperature was obtained by fitting the absorption tail below the absorption coefficient of the PC spectrum, and the effective phonon energy can be derived from the temperature-dependent steepness parameter associated with Urbach energy. Our study indicates that the broadening of the absorption edge in the as-synthesized bulk γ-InSe is caused by a combination of electron/exciton–phonon interactions and thermal/structural disorder.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography · Phase-change materials and chalcogenides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan
Department of Electrical Engineering, Lunghwa University of Science and Technology, Guishan, Taoyuan 333, Taiwan
Department of Electronic Engineering, Lunghwa University of Science and Technology, Guishan, Taoyuan 333, Taiwan
Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106, Taiwan
Department of Telecommunication Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 811, Taiwan
Funding
National Science Council Project
References (24)
Show source-provided references
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