Mechanism ofp-CdTe aging
Source abstract
Abstract
We propose a mechanism of semiconductor aging accompanied by isothermal changes in the electrical conductivity of the material. The mechanism is based on the notion that aging is due to changes in the dimensions of electroactive defect associates. Experimental data forp-CdTe lend support to the proposed mechanism of aging.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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References (7)
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