Metal-semiconductor transition in nonstoichiometric vanadium dioxide films
Source abstract
Abstract
Undoped and tungsten-doped nonstoichiometric vanadium dioxide films have been prepared by a modified sol-gel process, and the effect of synthesis conditions on the parameters of the metal-semiconductor transition in the films has been studied. In particular, it is shown that the temperature of the metal-semiconductor transition in vanadium dioxide decreases with increasing W content and that no phase transition occurs at doping levels above 6 at %. The composition of the films has been evaluated by x-ray diffraction, and their surface morphology has been examined by atomic force microscopy. The parameters of electrical switching in the films can be stabilized by reducing the transition temperature.
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Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · Catalysis and Oxidation Reactions
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
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