journal article·2022-11-11Open access

Predicting the Wafer Material Removal Rate for Semiconductor Chemical Mechanical Polishing Using a Fusion Network

Chien-Liang Liu, Chun-Jan Tseng, Wen-Hoar Hsaio, Sheng-Hao Wu, Shu-Rong Lu

Applied Sciences· Volume 12· Issue 22

Abstract

Predicting the wafer material removal rate (MRR) is an important step in semiconductor manufacturing for total quality control. This work proposes a deep learning model called a fusion network to predict the MRR, in which we consider separating features into shallow and deep features and use the characteristics of deep learning to perform a fusion of these two kinds of features. In the proposed model, the deep features go through a sequence of nonlinear transformations and the goal is to learn the complex interactions among the features to obtain the deep feature embeddings. Additionally, the proposed method is flexible and can incorporate domain knowledge into the model by encoding the knowledge as shallow features. Once the learning of deep features is completed, the proposed model uses the shallow features and the learned deep feature embeddings to obtain new features for the subsequent layers. This work performs experiments on a dataset from the 2016 Prognostics and Health Management Data Challenge. The experimental results show that the proposed model outperforms the competition winner and three ensemble learning methods. The proposed method is a single model, whereas the comparison methods are ensemble models. Besides the experimental results, we conduct extensive experiments to analyze the proposed method.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Advanced machining processes and optimization · Integrated Circuits and Semiconductor Failure Analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Industrial Engineering and Management, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan

National Defense Management Education and Training Center, Management College, National Defense University, Taipei 112305, Taiwan

Department of Computer Science and Information Engineering, Nanya Institute of Technology, Taoyuan 320678, Taiwan

Funding

National Science and Technology Council

References (41)

Show source-provided references
1. A Structure Data-Driven Framework for Virtual Metrology Modeling
2. Cho, Y., Liu, P., Jeon, S., Lee, J., Bae, S., Hong, S., Kim, Y.H., and Kim, T. (2022). Simulation and Experimental Investigation of the Radial Groove Effect on Slurry Flow in Oxide Chemical Mechanical Polishing. Appl. Sci., 12.10.3390/app12094339 ↗
3. A two-stage clustered multi-task learning method for operational optimization in chemical mechanical polishing10.1016/j.jprocont.2015.06.005 ↗
4. A mathematical model for chemical–mechanical polishing based on formation and removal of weakly bonded molecular species10.1016/S0043-1648(03)00015-2 ↗
5. Jeong, S., Jeong, K., Choi, J., and Jeong, H. (2021). Analysis of correlation between pad temperature and asperity angle in chemical mechanical planarization. Appl. Sci., 11.10.3390/app11041507 ↗
6. Material removal mechanisms in lapping and polishing10.1016/S0007-8506(07)60207-8 ↗
7. An efficient material removal rate prediction model for cemented carbide inserts chemical mechanical polishing10.1016/j.wear.2020.203293 ↗
8. Park, S., and Lee, H. (2021). Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper. Appl. Sci., 11.10.3390/app11167232 ↗
9. Son, J., and Lee, H. (2021). Contact-area-changeable CMP conditioning for enhancing pad lifetime. Appl. Sci., 11.10.3390/app11083521 ↗
10. Active Object Discovery and Localization Using Sound-Induced Attention10.1109/TII.2020.3000240 ↗
11. Chemical effect on the material removal rate in the CMP of silicon wafers10.1016/j.wear.2010.11.006 ↗
12. Impact of Abrasive Particles on the Material Removal Rate in CMP A Microcontact Perspective10.1149/1.1637561 ↗
13. Oliver, M.R., Schmidt, R.E., and Robinson, M. (2000, January 23–25). CMP pad surface roughness and CMP removal rate. Proceedings of the 198th Meeting of the Electrochemical Society, 4th International Symposium on CMP, Phoenix, AZ, USA.
14. Effects of pad properties on material removal in chemical mechanical polishing10.1016/j.jmatprotec.2006.11.216 ↗
15. Programming a robot for conformance grinding of complex shapes by capturing the tacit knowledge of a skilled operator10.1109/TASE.2015.2474708 ↗
16. Surface interactions in steel polishing for the precision tool making10.1016/S0007-8506(07)60494-6 ↗
17. An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes10.1016/j.wear.2008.12.014 ↗
18. A systematic literature review of machine learning methods applied to predictive maintenance10.1016/j.cie.2019.106024 ↗
19. Data-based predictive hybrid driven control for a class of imperfect networked systems10.1109/TII.2018.2799081 ↗
20. A Manufacturing Big Data Solution for Active Preventive Maintenance10.1109/TII.2017.2670505 ↗
21. A machine learning approach for structural health monitoring using noisy data sets10.1109/TASE.2019.2950958 ↗
22. Regression methods for virtual metrology of layer thickness in chemical vapor deposition10.1109/TMECH.2013.2273435 ↗
23. Application of latent variable methods to process control and multivariate statistical process control in industry10.1002/acs.859 ↗
24. Multitask learning for virtual metrology in semiconductor manufacturing systems10.1016/j.cie.2018.06.024 ↗
25. Machine learning-based virtual metrology on film thickness in amorphous carbon layer deposition process10.1016/j.measen.2021.100046 ↗
26. Adaptive Virtual Metrology Design for Semiconductor Dry Etching Process Through Locally Weighted Partial Least Squares10.1109/TSM.2015.2409299 ↗
27. Color Filter Polishing Optimization Using ANFIS With Sliding-Level Particle Swarm Optimizer10.1109/TSMC.2017.2776158 ↗
28. Enhanced virtual metrology on chemical mechanical planarization process using an integrated model and data-driven approach
29. A deep learning-based approach to material removal rate prediction in polishing10.1016/j.cirp.2017.04.013 ↗
30. Predictive modeling of material removal rate in chemical mechanical planarization with physics-informed machine learning10.1016/j.wear.2019.02.012 ↗
31. Remaining useful life prediction based on a double-convolutional neural network architecture10.1109/TIE.2019.2924605 ↗
32. Bottou, L. (2010, January 22–27). Large-scale machine learning with stochastic gradient descent. Proceedings of the COMPSTAT’2010, Paris, France.10.1007/978-3-7908-2604-3_16 ↗
33. Ge, R., Huang, F., Jin, C., and Yuan, Y. (2015, January 3–6). Escaping from saddle points—Online stochastic gradient for tensor decomposition. Proceedings of the Conference on Learning Theory, PMLR, Paris, France.
34. Ioffe, S., and Szegedy, C. (2015, January 6–11). Batch Normalization: Accelerating Deep Network Training by Reducing Internal Covariate Shift. Proceedings of the 32nd International Conference on Machine Learning, PMLR, Lille, France.
35. Nair, V., and Hinton, G.E. (2010, January 21–24). Rectified Linear Units Improve Restricted Boltzmann Machines. Proceedings of the 27th International Conference on Machine Learning, Haifa, Israel.
36. Krizhevsky, A., Sutskever, I., and Hinton, G.E. (2012, January 3–8). Imagenet classification with deep convolutional neural networks. Proceedings of the Advances in Neural Information Processing Systems, Lake Tahoe, NV, USA.
37. Dropout: A simple way to prevent neural networks from overfitting
38. Adaptive virtual metrology for semiconductor chemical mechanical planarization process using GMDH-type polynomial neural networks10.1016/j.jprocont.2017.12.004 ↗
39. Prediction of material removal rate in chemical mechanical polishing via residual convolutional neural network10.1016/j.conengprac.2020.104673 ↗
40. Chen, T., and Guestrin, C. (2016, January 13–17). Xgboost: A scalable tree boosting system. Proceedings of the 22nd ACM Sigkdd International Conference on Knowledge Discovery and Data Mining, San Francisco, CA, USA.10.1145/2939672.2939785 ↗
41. Ba, J., and Caruana, R. (2014, January 8–13). Do deep nets really need to be deep?. Proceedings of the Advances in Neural Information Processing Systems, Montreal, QC, Canada.