Universal transfer of full‐class metal electrodes for barrier‐free two‐dimensional semiconductor contacts

Abstract Metal–semiconductor contacts are crucial components in semiconductor devices. Ultrathin two‐dimensional transition‐metal dichalcogenide semiconductors can sustain transistor scaling for next‐generation integrated circuits. However, their performance is often degraded by conventional metal deposition, which results in a high barrier due to chemical disorder and Fermi‐level pinning (FLP). Although, transferring electrodes can address these issues, they are limited in achieving universal transfer of full‐class metals due to strong adhesion between pre‐deposited metals and substrates. Here, we propose a nanobelt‐assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of electrodes. Our contacts obey the Schottky–Mott rule and exhibit a FLP of S = 0.99. Both the electron and hole contacts show record‐low Schottky barriers of 4.2 and 11.2 meV, respectively. As a demonstration, we construct a doping‐free WSe₂ inverter with these high‐performance contacts, which exhibits a static power consumption of only 58 pW. This strategy provides a universal method of electrode preparation for building high‐performance post‐Moore electronic devices.