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Source abstract
Abstract
A dual‐logic‐in‐memory device is demonstrated through a single bidirectional polarization‐integrated 2D ferroelectric field‐effect transistor. image
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · 2D Materials and Applications
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References
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