Photoconductive Semiconductor Switches: Materials, Physics, and Applications
Source abstract
Abstract
Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.
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Research context
OpenAlex topics: Ga2O3 and related materials · GaN-based semiconductor devices and materials · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Sandia National Laboratories, Albuquerque, NM 87123, USA
Lawrence Livermore National Laboratories, Livermore, CA 94550, USA
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106, USA
Funding
ARPA-E BREAKERS program
References (96)
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