Modeling the effects of surface potential on gallium nitride betavoltaic cell collection efficiency
Source abstract
Abstract
Abstract The surface potential of P-type Gallium Nitride (GaN) is modeled using a Metal-Oxide-Semiconductor (MOS) based field plate. Using this model, the charge collection efficiency of a PN junction GaN betavoltaic device was simulated. By including the effects of incomplete ionization together with the surface potential, the P-layer’s thickness design can be optimized. The model indicates for P-type doping of 1 × 10 19 cm -3 , 87% of the zero-surface barrier collection efficiency can be obtained. However, if only 1 × 10 18 cm -3 doping can be achieved, the collection efficiency will be only 57% of the maximum zero-surface barrier collection. As a result, heavily doped, ultra-thin P-layers enable improved carrier collection and higher efficiency under elevated surface potential conditions.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Energy Technologies and Civil Engineering Innovations · Photocathodes and Microchannel Plates · solar cell performance optimization
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. M.G. Spencer, T. Alam, (2019). High power direct energy conversion by nuclear batteries. In Applied Physics Reviews. 6, Issue 3). American Institute of Physics Inc. https://doi.org/10.1063/1.512316310.1063/1.5123163 ↗
2. M.A. Prelas, C.L. Weaver, M.L. Watermann, E.D. Lukosi, R.J. Schott, D.A. Wisniewski, (2014). A review of nuclear batteries. In Progress in Nuclear Energy. 75, 117–148). Elsevier Ltd. https://doi.org/10.1016/j.pnucene.2014.04.00710.1016/j.pnucene.2014.04.007 ↗
3. C. Thomas, S. Portnoff, M.G. Spencer, High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes. Appl. Phys. Lett. 108(1) (2016). https://doi.org/10.1063/1.493920310.1063/1.4939203 ↗
4. W.B. Ray, M.S. Litz, J.A. Russo, (2016). Modeling and Simulation of a Gallium Nitride (GaN) Betavoltaic Energy Converter
5. G. Koley, M. Spencer, Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy. J. Appl. Phys. 90, 337–344 (2001). https://doi.org/10.1063/1.137194110.1063/1.1371941 ↗
6. J. Asubar, Z. Yatabe, D. Gregusova, Controlling surface/interface states in GaN based transistors: Surface model, insulated gate, and surface passivation. (2020). https://doi.org/10.1063/5.003956410.1063/5.0039564 ↗
7. S. Barbet, R. Aubry, M.-A. Di Forte-Poisson, J.C.-C. Jacquet, D. Deresmes, T. Melin, D. Theron, Surface potential of n- and p-type Gan Measured by Kelvin force microscopy Appl Phus. Lett. 93, 212107 (2008). https://doi.org/10.1063/1.302863910.1063/1.3028639 ↗
8. S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley Interscience, 2007)
9. Z. Xia, K. Zang, D. Liu, M. Zhou, T.J. Kim, H. Zhang, Z. Ma, High-sensitivity silicon ultraviolet p+-in avalanche photodiode using ultra-shallow boron gradient doping. Appl. Phys. Lett. 111(8), 081109 (2017). https://doi.org/10.1063/1.498559110.1063/1.4985591 ↗
10. K. Köhler, J. Wiegert, H.P. Menner, M. Maier, L. Kirste, The surface potential of GaN:Si. J. Appl. Phys. 103, 023706 (2008). https://doi.org/10.1063/1.283100410.1063/1.2831004 ↗
11. T. Nakamura, N. Ishida, K. Sagisaka, Y. Koide, Surface potential imaging and characterizations of a GaN p–n junction with Kelvin probe force microscopy. AIP Adv. 10, 085010 (2020). https://doi.org/10.1063/5.000752410.1063/5.0007524 ↗