journal article·2026-02

Effects of fluorine on the optoelectronic properties and crystal field symmetry of silicon-based erbium doped gallium oxide films and devices

Houwei Pang, Tong Zhao, Sichen Lin, Dongsheng Li, Deren Yang

Applied Physics A· Volume 132· Issue 2
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon Nanostructures and Photoluminescence · Luminescence Properties of Advanced Materials · Glass properties and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (35)

Show source-provided references
1. N. Margalit, C. Xiang, S.M. Bowers, A. Bjorlin, R. Blum, J.E. Bowers, Perspective on the future of silicon photonics and electronics. Appl. Phys. Lett. 118, 220501 (2021). https://doi.org/10.1063/5.005011710.1063/5.0050117 ↗
2. L. Pavesi, Routes toward silicon-based lasers. Mater. Today 8, 18–25 (2005). https://doi.org/10.1016/s1369-7021(04)00675-310.1016/s1369-7021(04)00675-3 ↗
3. W. Bogaerts, D. Perez, J. Capmany, D.A.B. Miller, J. Poon, D. Englund, F. Morichetti, A. Melloni, Programmable photonic circuits. Nat 586, 207–216 (2020). https://doi.org/10.1038/s41586-020-2764-010.1038/s41586-020-2764-0 ↗
4. E.F. Perez, G. Moille, X. Lu, J. Stone, F. Zhou, K. Srinivasan, High-performance kerr microresonator optical parametric oscillator on a silicon chip. Nat. Commun. 14, 242 (2023). https://doi.org/10.1038/s41467-022-35746-910.1038/s41467-022-35746-9 ↗
5. A. Polman, Erbium implanted thin film photonic materials. J. Appl. Phys. 82, 1–39 (1997). https://doi.org/10.1063/1.36626510.1063/1.366265 ↗
6. J. Hu, H. Pang, Y. Wang, D. Yang, D. Li, Current driving Er-doped electroluminescence devices with long-term reliability. IEEE Electron Device Lett. 44, 480–483 (2023). https://doi.org/10.1109/led.2023.323571610.1109/led.2023.3235716 ↗
7. Y. Wang, J. Hu, H. Pang, Y. Wu, D. Yang, D. Li, Controllable design of minority carrier diffusion in Npn devices for enhancing Er3+-related electroluminescence. ACS Photonics 11, 1524–1532 (2024). https://doi.org/10.1021/acsphotonics.3c0165610.1021/acsphotonics.3c01656 ↗
8. Y. Wu, H. Pang, Y. Wang, S. Lin, L. Wang, D. Yang, D. Li, Low driving voltage and high reliability 1.54 µm electroluminescence from SnO2:Er/p-Si heterostructured devices via energy transfer effect. J. Appl. Phys. 136, 133102 (2024). https://doi.org/10.1063/5.022334010.1063/5.0223340 ↗
9. S. Cueff, J. Manel Ramírez, J.A. Kurvits, Y. Berencén, R. Zia, B. Garrido, R. Rizk, C. Labbé, Electroluminescence efficiencies of erbium in silicon-based hosts. Appl. Phys. Lett. 103, 191109 (2013). https://doi.org/10.1063/1.482914210.1063/1.4829142 ↗
10. Z. Yu, X. Guo, Z. Yan, Y. Yang, J. Sun, Er-doped MgAl2O4 nanofilms enabling highly efficient near‐infrared electroluminescence from the silicon‐based MOS devices fabricated by atomic layer deposition. Adv. Opt. Mater. 12, 2302417 (2024). https://doi.org/10.1002/adom.20230241710.1002/adom.202302417 ↗
11. H. Pang, Y. Wang, Y. Wu, S. Lin, D. Li, D. Yang, Effects of oxygen vacancies on the optical and electrical performances of silicon-based Er doped Ga2O3 films. J. Phys. D. Appl. Phys. 57, 355107 (2024). https://doi.org/10.1088/1361–6463/ad4b3210.1088/1361-6463/ad4b32 ↗
12. H. Pang, M. He, J. Hu, Y. Fan, H. Shang, D. Li, D. Yang, Near-infrared luminescence of erbium doped Ga2O3 films and devices based on silicon: realization of energy transfer. Opt. Mater. 129, 112462 (2022). https://doi.org/10.1016/j.optmat.2022.11246210.1016/j.optmat.2022.112462 ↗
13. H. Pang, Y. Fan, Y. Wang, Y. Wu, D. Li, D. Yang, Enhanced luminescence of erbium doped Ga2O3 films and devices by optimizing annealing process. Mater. Sci. Semicond. Process. 171, 108029 (2024). https://doi.org/10.1016/j.mssp.2023.10802910.1016/j.mssp.2023.108029 ↗
14. H. Pang, L. Yang, D. Li, D. Yang, Enhanced emission in erbium- and ytterbium-doped gallium oxide devices with constrained energy band on silicon substrates. ACS Appl. Electron. Mater. 7, 2446–2455 (2025). https://doi.org/10.1021/acsaelm.4c0224910.1021/acsaelm.4c02249 ↗
15. M.J. Tadjer, J.A. Freitas, J.C. Culbertson, M.H. Weber, E.R. Glaser, A.L. Mock, N.A. Mahadik, K. Schmieder, E. Jackson, J.C. Gallagher, B.N. Feigelson, A. Kuramata, Structural and electronic properties of Si- and Sn-doped (− 201) β-Ga2O3 annealed in nitrogen and oxygen atmospheres. J. Phys. D. Appl. Phys. 53, 504002 (2020). https://doi.org/10.1088/1361–6463/abb43210.1088/1361-6463/abb432 ↗
16. Y. Choi, C. Kim, Y. Hwang, S. Park, H. Kang, S. Chakraborty, R.B.K. Chung, Fluorine-doped n-type α-Ga2O3 and its phase stability. Cryst. Growth Des. 25, 1023–1029 (2025). https://doi.org/10.1021/acs.cgd.4c0137210.1021/acs.cgd.4c01372 ↗
17. P.N. Favennec, H. L’haridon, M. Salvi, D. Moutonnet, Y.L. Guillou, Luminescence of erbium implanted in various semiconcudtors: IV, Ⅲ-V and Ⅱ-VI materials. Electron. Lett. 25, 718–719 (1989). https://doi.org/10.1049/el:1989048610.1049/el:19890486 ↗
18. F. Ren, J. Michel, Q. Sun-Paduano, B. Zheng, H. Kitagawa, D.C. Jacobson, J.M. Poate, L.C. Kimerling, IC compatible processing of Si:Er for optoelectronics. Mater. Res. Soc. Symp. Proc. 301, 87–95 (1993). https://doi.org/10.1557/PROC-301-8710.1557/PROC-301-87 ↗
19. D.L. Adler, D.C. Jacobson, D.J. Eaglesham, M.A. Marcus, J.L. Benton, J.M. Poate, P.H. Citrin, Local structure of 1.54-µm‐luminescence Er3+ implanted in Si. Appl. Phys. Lett. 61, 2181–2183 (1992). https://doi.org/10.1063/1.10828810.1063/1.108288 ↗
20. M. Ishii, Y. Komukai, Theoretical prediction of local distortion in an ErO6 cluster: stabilization of a C4v structure by a rack and pinion effect. Appl. Phys. Lett. 79, 934–936 (2001). https://doi.org/10.1063/1.139230510.1063/1.1392305 ↗
21. M. Ishii, S. Komuro, T. Morikawa, Y. Aoyagi, Local structure analysis of an optically active center in Er-doped ZnO thin film. J. Appl. Phys. 89, 3679–3684 (2001). https://doi.org/10.1063/1.135528410.1063/1.1355284 ↗
22. M. Ishii, Y. Komukai, Theory of local distortion in ErO6 cluster: spontaneous symmetry reduction in lanthanoid octahedrons. J. Appl. Phys. 94, 2368–2372 (2003). https://doi.org/10.1063/1.159481110.1063/1.1594811 ↗
23. Y. Xie, E.A. Fitzgerald, Y. Mii, Evaluation of erbium-doped silicon for optoelectronic applications. J. Appl. Phys. 70, 3223–3228 (1991). https://doi.org/10.1063/1.34930610.1063/1.349306 ↗
24. J. Chen, W. Zhu, Y. Gao, D. Yang, X. Ma, Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: enhancement effect of fluorine co-doping. Opt. Express 27, 30919–30930 (2019). https://doi.org/10.1364/oe.27.03091910.1364/oe.27.030919 ↗
25. T. Zhao, C. Hua, W. Lan, Y. Sun, D. Wu, Y. Lu, X. Ma, D. Yang, On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures. J. Appl. Phys. 129, 145702 (2021). https://doi.org/10.1063/5.004568010.1063/5.0045680 ↗
26. B. Fu, Z. Jia, W. Mu, Y. Yin, J. Zhang, X. Tao, A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism. J. Semicond. 40, 011804 (2019). https://doi.org/10.1088/1674–4926/40/1/01180410.1088/1674-4926/40/1/011804 ↗
27. D. Guo, Q. Guo, Z. Chen, Z. Wu, P. Li, W. Tang, Review of Ga2O3-based optoelectronic devices. Mater. Today Phys. 11, 100157 (2019). https://doi.org/10.1016/j.mtphys.2019.10015710.1016/j.mtphys.2019.100157 ↗
28. J. Zhang, J. Shi, D. Qi, L. Chen, K. Zhang, Recent progress on the electronic structure, defect, and doping properties of Ga2O3. APL Mater. 8(2), 020906 (2020). https://doi.org/10.1063/1.514299910.1063/1.5142999 ↗
29. J. Tauc, R. Grigorovici, A. Vancu, Optical properties and electronic structure of amorphous germanium. physica status solidi (b) 15, 627–637 (1966). https://doi.org/10.1002/pssb.1966015022410.1002/pssb.19660150224 ↗
30. Z. Wu, G. Bai, Q. Hu, D. Guo, C. Sun, L. Ji, M. Lei, L. Li, P. Li, J. Hao, W. Tang, Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films. Appl. Phys. Lett. 106, 171910 (2015). https://doi.org/10.1063/1.491958610.1063/1.4919586 ↗
31. J. Zhang, S. Han, M. Cui, X. Xu, W. Li, H. Xu, C. Jin, M. Gu, L. Chen, K. Zhang, Fabrication and interfacial electronic structure of wide bandgap NiO and Ga2O3 p–n heterojunction. ACS Appl. Electron. Mater. 2, 456–463 (2020). https://doi.org/10.1021/acsaelm.9b0070410.1021/acsaelm.9b00704 ↗
32. J.B. Varley, J.R. Weber, A. Janotti, C.G.V.D. Walle, Oxygen vacancies and donor impurities in β-Ga2O3. Appl. Phys. Lett. 97, 142106 (2010). https://doi.org/10.1063/1.349930610.1063/1.3499306 ↗
33. K. Irmscher, Z. Galazka, M. Pietsch, R. Uecker, R. Fornari, Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method. J. Appl. Phys. 110, 063720 (2011). https://doi.org/10.1063/1.364296210.1063/1.3642962 ↗
34. H. Zhang, Z. Liang, C. Huang, L. Xie, H. Wang, J. Hu, Z. Jiang, F. Song, Enhanced dissociation activation of CO2 on the Bi/Cu(111) interface by the synergistic effect. J. Cata 410, 1–9 (2022). https://doi.org/10.1016/j.jcat.2022.04.00110.1016/j.jcat.2022.04.001 ↗
35. Z. Chen, X. Wang, F. Zhang, S. Noda, K. Saito, T. Tanaka, M. Nishio, M. Arita, Q. Guo, Observation of low voltage driven green emission from erbium doped Ga2O3 light-emitting devices. Appl. Phys. Lett 109(2), 022107 (2016). https://doi.org/10.1063/1.495883810.1063/1.4958838 ↗