Characterization of AgIn5S8/Ag3.4In0.6 nanocomposite thin films as promising materials for enhancing (AgIn5S8/Ag3.4In0.6)/p-Si heterojunctions
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Abstract
Abstract Nanocomposite thin films of AgIn 5 S 8 /Ag 3.4 In 0.6 were prepared and proportion controlled with different thicknesses by the thermal deposition technique and heat treated at 330 °C for 2 h. XRD patterns demonstrated that the prepared thin films crystallized in two cubic phases of AgIn 5 S 8 and Ag 3.4 In 0.6 . The EDX revealed data near stoichiometric composition with slightly excess S. The surface morphology by FE-SEM showed accumulated nanoparticles forming granules that increased in diameter with increasing film thickness and elongated at the highest thickness of 450 nm. The optical measurements of films revealed two optical direct transitions for each film, ranging from 1.67 to 1.53 and 2.89 to 2.57 eV, by increasing the film thickness from 225 to 450 nm. Other optical linear and nonlinear parameters were determined. Electrical investigation of the resistivity, conductivity, and heterojunction electrical parameters with a crystalline p-Si substrate showed a slight improvement in the fabricated device conductivity with increasing the film thickness. AgIn 5 S 8 /Ag 3.4 In 0.6 nanocrystalline thin films provide a novel and promising candidate for long-life photovoltaic devices and photoelectronic applications.
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OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Semiconductor materials and interfaces
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References (74)
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