Channel length dependency in Sn: ZnO/ZrO2 thin film transistors: a performance analysis
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Semiconductor materials and devices · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. J.S. Park, W.J. Maeng, H.S. Kim, J.S. Park, Thin Solid Films. 520, 1679 (2012)10.1016/j.tsf.2011.07.018 ↗
2. Z. Wang, P.K. Nayak, J.A. Caraveo-Frescas, H.N. Alshareef, Adv. Mater. 28, 3831 (2016)10.1002/adma.201503080 ↗
3. E. Fortunato, P. Barquinha, R. Martins, Adv. Mater. 24, 2945 (2012)10.1002/adma.201103228 ↗
4. M. Zhang, W. Zhou, R. Chen, M. Wong, H.-S. Kwok, Semicond. Sci. Technol. 28, 115003 (2013)10.1088/0268-1242/28/11/115003 ↗
5. J.B. Kim, C. Fuentes-Hernandez, W.J. Potscavage, X.-H. Zhang, B. Kippelen, Appl. Phys. Lett. 94, 142107 (2009)10.1063/1.3118575 ↗
6. P.K. Nayak, M.N. Hedhili, D. Cha, H.N. Alshareef, Appl. Phys. Lett. 103, 2 (2013)10.1063/1.4816060 ↗
7. A. Liu, H. Zhu, W.-T. Park, S.-J. Kim, H. Kim, M. Kim, Y.-Y. Noh, Nat. Commun. 11, 4309 (2020)10.1038/s41467-020-18006-6 ↗
8. M.R. Shijeesh, M.K. Jayaraj, J. Appl. Phys. 123, 161538 (2018)10.1063/1.4991812 ↗
9. P. Salunkhe, M. A. A V, and, D. Kekuda, Mater. Res. Express. 7, 016427 (2020)10.1088/2053-1591/ab69c5 ↗
10. H.H. Hsu, C.H. Cheng, P. Chiou, Y.C. Chiu, C.Y. Chang, Z.W. Zheng, Solid State Electron. 99, 51 (2014)10.1016/j.sse.2014.05.010 ↗
11. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature. 432, 488 (2004)10.1038/nature03090 ↗
12. P. Salunkhe, M.A. Muhammed, D. Kekuda, Appl. Phys. Mater. Sci. Process. 127, 390 (2021)10.1007/s00339-021-04501-0 ↗
13. A.V. Bulgakov, A.B. Evtushenko, Y.G. Shukhov, I. Ozerov, W. Marine, Appl. Phys. Mater. Sci. Process. 101, 685 (2010)10.1007/s00339-010-5921-8 ↗
14. R.F.P. Martins, A. Ahnood, N. Correia, L.M.N.P. Pereira, R. Barros, P.M.C.B. Barquinha, R. Costa, I.M.M. Ferreira, A. Nathan, E.E.M.C. Fortunato, Adv. Funct. Mater. 23, 2153 (2013)10.1002/adfm.201202907 ↗
15. P. Barquinha, R. Martins, L. Pereira, E. Fortunato, Transparent Oxide Electronics: from Materials to Devices (Wiley, 2012)10.1002/9781119966999 ↗
16. Y. Li, K. Lu, S. Zhang, J. Phys. D Appl. Phys. 54, 025102 (2021)10.1088/1361-6463/abba94 ↗
17. Z. Xiao, K. Kisslinger, S. Chance, S. Banks, Crystals. 10, 1 (2020)10.3390/cryst10020136 ↗
18. K. Lakshmi Ganapathi, N. Bhat, S. Mohan, Appl. Phys. Lett. 103, 073105 (2013)10.1063/1.4818467 ↗
19. M. Voigt, M. Sokolowski, Mater. Sci. Eng. B Solid-State Mater. Adv. Technol. 109, 99 (2004)10.1016/j.mseb.2003.10.056 ↗
20. P. Pujar, H. Cho, S. Gandla, M. Naqi, S. Hong, S. Kim, Adv. Funct. Mater. 31, 1 (2021)10.1002/adfm.202103748 ↗
21. H.H. Hsu, C.Y. Chang, C.H. Cheng, Curr. Appl. Phys. 13, 1459 (2013)10.1016/j.cap.2013.04.026 ↗
22. S.M. Pujar, S. Moger, G.K. Rao, M.G. Mahesha, A. Kulal, J. Mater. Sci. Mater. Electron. 34, 1 (2023)10.1007/s10854-022-09457-2 ↗
23. A.T. Oluwabi, D. Gaspar, A. Katerski, A. Mere, M. Krunks, L. Pereira, I.O. Acik, Mater. (Basel). 13, 1 (2020)10.3390/ma13010006 ↗
24. L.Q. Zhu, Q. Fang, G. He, M. Liu, L.D. Zhang, Nanotechnology. 16, 2865 (2005)10.1088/0957-4484/16/12/022 ↗
25. P. Salunkhe, P. Bhat, D. Kekuda, Phys. Scr. 98, 015829 (2023)10.1088/1402-4896/acaa6f ↗
26. P. Bhat, P. Salunkhe, M.S. Murari, D. Kekuda, Sens. Actuators Phys. 338, 113479 (2022)10.1016/j.sna.2022.113479 ↗
27. P. Bhat, P. Salunkhe, D. Kekuda, Appl. Phys. Mater. Sci. Process. 129, 205 (2023)10.1007/s00339-023-06466-8 ↗
28. M.A.V. Ali, D. Kekuda, Phys. Status Solidi Appl. Mater. Sci. 214, 1 (2017)10.1002/pssa.201700113 ↗
29. J.S. Lee, S. Chang, S.-M. Koo, S.Y. Lee, IEEE Electron. Device Lett. 31, 225 (2010)10.1109/LED.2009.2038806 ↗
30. S. Sagar, N. Mohammadian, S. Park, L.A. Majewski, B.C. Das, Nanotechnology. 31, 255705 (2020)10.1088/1361-6528/ab7fd1 ↗
31. J.B. Kim, C. Fuentes-Hernandez, B. Kippelen, Appl. Phys. Lett. 93, 1 (2008)
32. J.B. Kim, C. Fuentes-Hernandez, W.J. Potscavage, X.-H. Zhang, B. Kippelen, Appl. Phys. Lett. 94, 2 (2009)10.1063/1.3118575 ↗
33. K.-Y. Kim, T.G. Kim, Y.H. Kim, J. Park, J. Phys. D Appl. Phys. 48, 035101 (2015)10.1088/0022-3727/48/3/035101 ↗
34. C. Fernandes, A. Santa, Â. Santos, P. Bahubalindruni, J. Deuermeier, R. Martins, E. Fortunato, P. Barquinha, Adv. Electron. Mater. 4, 1 (2018)10.1002/aelm.201800032 ↗
35. Y. Zhang, D. Han, L. Huang, J. Dong, Y. Cong, G. Cui, X. Zhang, X. Zhang, S. Zhang, Y. Wang, Electron. Lett. 52, 302 (2016)10.1049/el.2015.3277 ↗
36. D. Han, Y. Zhang, Y. Cong, W. Yu, X. Zhang, Y. Wang, Sci. Rep. 6, 1 (2016)10.1038/srep38984 ↗
37. Y.J. Han, S.H. Lee, S.Y. Bak, T.H. Han, S. Kim, M. Yi, Electron 10, (2021)10.3390/electronics10091099 ↗
38. Z. Chen, D. Han, X. Zhang, Y. Wang, Sci. Rep. 9, 1 (2019)10.1038/s41598-019-53766-2 ↗
39. L. Jiang, J. Li, K. Huang, S. Li, Q. Wang, Z. Sun, T. Mei, J. Wang, L. Zhang, N. Wang, X. Wang, ACS Omega. 2, 8990 (2017)10.1021/acsomega.7b01420 ↗
40. S. Ruzgar, M. Caglar, J. Mater. Sci. Mater. Electron. 30, 485 (2019)10.1007/s10854-018-0313-5 ↗
41. S. Lee, Y. Song, H. Park, A. Zaslavsky, D.C. Paine, Solid State Electron. 135, 94 (2017)10.1016/j.sse.2017.06.033 ↗