On the memory-switching property of ternary CuZnS thin films
Source abstract
Abstract
Copper–zinc sulfide (CZS) is a ternary earth-abundant and non-toxic material having a wide range of optoelectronic applications. This investigation presents the bipolar-switching characteristics of CZS-switching layer-based devices for resistive memory-switching applications. The material was deposited on the fluorine doped tin oxide (FTO) substrate by spray pyrolysis method at a substrate temperature of 350 °C. Structural analysis indicate that the as prepared films consists of a composite structure of CuS and ZnS phases. The deposited films are p-type in nature. Resistive memory-switching devices are fabricated with the structure of FTO/CZS/Ag. The observed ON/OFF ratio of ~ 320 suggests that the device possesses good memory-switching properties. The formation and rupture of the conductive filaments of the FTO/CZS/Ag memory device were detected from the hysteresis curve. This confirms that CZS material can be used as the switching layer to fabricate a simple, cost-effective, and non-toxic bipolar device, which can deliver the perfect switching characteristics.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (27)
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