Investigation of Yb3+ ion doping on ferroelectric and piezoelectric behaviour of PLZT film
Source abstract
Abstract
In this report, we have investigated the ytterbium (Yb) ion doping in PLZT lattice and correlated its ferroelectric and piezoelectric properties. For this, the stoichiometric composition of Pb0.92(La1–yYby)0.08(Zr0.52Ti0.48)0.98O3 (PLYZT) films at various Yb concentrations i.e., y = 0.0, 0.3, 0.5, and 0.7 were prepared by chemical solution deposition method. The structural transformations were explored by the X-ray diffraction pattern and Raman spectra. The improvement in the ferroelectric properties is correlated with the c-lattice parameter related structural distortion and c-domain contribution at a particular concentration of PLYZT film. The improved fatigue resistance was shown by PLYZT film at y = 0.3 concentration of Yb. The reduction in piezoelectric properties is correlated with the intrinsic contribution. The asymmetric strain curve with forward and reversed bias is correlated with the higher angle TiO6 octahedra tilt due to the substitution of smaller ion at A-site of the PLZT films.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
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