Valence-band offset of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction with tunable bandgaps of both sides measured by X-ray photoelectron spectroscopy
Source abstract
Abstract
The valence-band offset (VBO) of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction grown by pulsed laser deposition was investigated by X-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction. It was found that n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction has a type-II band alignment and its VBO is determined to be 1.88 ± 0.05 eV, and conduction-band offset is deduced to be −1.91 ± 0.05 eV. Alloying with Mg can tune the positions of valence-band maximum (VBM), conduction-band minimum (CBM) and bandgaps of both Zn1−x Mg x O and Ni1−x Mg x O thin films, according to which we can design various heterojunction devices with desired CBM and VBM values of both sides by tuning appropriate Mg composition. Also, there is blue shift of absorption edges of the integral Zn0.8Mg0.2O/Ni0.8Mg0.2O heterojunction, which has a significant impact on the design and application of deep-ultraviolet optoelectronic devices, such as solar-blind UV detectors with high photoresponse performance.
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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